isc P-Channel MOSFET Transistor
AOD421
FEATURES ·Drain Current –ID= -12.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -20V...
isc P-Channel MOSFET
Transistor
AOD421
FEATURES ·Drain Current –ID= -12.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 75mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-12.5
A
IDM
Drain Current-Single Pluse
-30
A
PD
Total Dissipation @TC=25℃
18.8
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
8.0
℃/W
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isc P-Channel MOSFET
Transistor
AOD421
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= -0.25mA
-20
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= -0.25mA
-0.7
-1.4
V
VGS= -10V; ID= -12.5A VGS= -10V; ID= -12.5A@TJ=125℃
75 105
mΩ
VGS= ±10V;VDS= 0
±1
uA
VDS= -16V; VGS= 0 VDS= -16V; VGS= 0@TJ=55℃
-0.5 -2.5
μA
IS= -1A...