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AOD424G Dataheets PDF



Part Number AOD424G
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOD424G DatasheetAOD424G Datasheet (PDF)

AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 46A < 4.9mΩ < 6.3mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G Orderable Part Number AOD424G S G S Package Type TO-252 Form Tape & Reel G S Minimum .

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AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 46A < 4.9mΩ < 6.3mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G Orderable Part Number AOD424G S G S Package Type TO-252 Form Tape & Reel G S Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 46 46 184 30 24 40 80 50 20 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 2.0 Max 20 50 2.5 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AOD424G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=20A Static Drain-Source On-Resistance Forward Transconductance VGS=2.5V, ID=18A VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS=4.5V, VDS=10V, ID=20A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=10V, RL=0.5W, RGEN=3W Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms Min 20 0.45 1.2 Typ 0.85 4.1 5.6 5 100 0.6 3300 485 370 2.4 31 5.2 8 7.5 15 72 21 17 30 Max Units V 1 μA 5 ±100 nA 1.25 V 4.9 mΩ 6.7 6.3 mΩ S 1 V 46 A pF pF pF 3.6 Ω 45 nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2017 www.aosmd.com Page 2 of 6 AOD424G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 2V 60 60 2.5V 40 4.5V 40 VDS=5V 125°C ID (A) ID (A) 20 VGS=1.5V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 7 6 VGS=2.5V 5 20 25°C 0 0 0.5 1 1.5 2 2.5 3 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 1.6 1.4 VGS=4.5V ID=20A 1.2 Normalized On-Resistance RDS(ON) (mW) 4 VGS=4.5V 3 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 ID=20A 10 8 125°C 1 VGS=2.5V ID=18A 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1.0E+00 1.0E-01 125°C IS (A) 6 4 25°C 2 1..


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