Document
AOD424G
20V N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
20V 46A < 4.9mΩ < 6.3mΩ
Applications
• DC/DC Converters in Computing, Servers, and POL • Battery protection switch
100% UIS Tested 100% Rg Tested
TO252
DPAK
D
Top View
Bottom View
D D
G
Orderable Part Number
AOD424G
S
G
S
Package Type
TO-252
Form
Tape & Reel
G S
Minimum Order Quantity
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±12 46 46 184 30 24 40 80 50 20 6.2 4
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RqJA
15 40
Maximum Junction-to-Case
Steady-State
RqJC
2.0
Max 20 50 2.5
Units °C/W °C/W °C/W
Rev.1.0: August 2017
www.aosmd.com
Page 1 of 6
AOD424G
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
ID=250μA, VGS=0V VDS=20V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
VGS=2.5V, ID=18A VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=10V, RL=0.5W, RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Min 20 0.45
1.2
Typ
0.85 4.1 5.6 5 100 0.6
3300 485 370 2.4
31 5.2 8 7.5 15 72 21 17 30
Max Units
V
1 μA
5
±100 nA
1.25
V
4.9 mΩ
6.7
6.3 mΩ
S
1
V
46
A
pF
pF
pF
3.6
Ω
45
nC
nC
nC ns
ns ns
ns
ns nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2017
www.aosmd.com
Page 2 of 6
AOD424G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
2V
60
60
2.5V
40
4.5V
40
VDS=5V 125°C
ID (A)
ID (A)
20 VGS=1.5V
0
0
1
2
3
4
5
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
7
6 VGS=2.5V
5
20
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
1.6
1.4
VGS=4.5V ID=20A
1.2
Normalized On-Resistance
RDS(ON) (mW)
4 VGS=4.5V
3
0
5
10
15
20
25
30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
12 ID=20A
10
8
125°C
1
VGS=2.5V
ID=18A
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00 1.0E-01
125°C
IS (A)
6
4 25°C
2
1..