IGBT
IKW25N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast re...
Description
IKW25N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers :
G E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25N120T2 1200V 25A
1.7V
175C K25T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage DC collector current (Tj=150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj=150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 600V, Tj, start 175C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only
VCE IC
ICpuls -...
Similar Datasheet
- K25T120 IKW25T120 - Infineon Technologies
- K25T1202 IGBT - Infineon