HM4892A

HM4892A 100VDS／±20VGS／6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features  VDSS=100V／VGSS=±20V／ID=6.5A RDS(ON)=37mΩ(max.)@VGS=10V  Reliable and Rugged  Advanced trench process technology  High Density Cell Design For Low On-Resistance   Schematic diagram Applications  Power Management in Inverter System  Boost for LED Backlight Switching Time Test Circuit and Waveforms HM' Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking +0$ Device +0$ Device Package 623 Reel Size - Tape width -  Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - v1.0 HM4892A 100VDS／±20VGS／6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID IDP IS TJ TSTG Drain-Source Voltage Gate –Source Voltage Parameter Continuous Drain Current 300us Pulsed Drain Current Tested Diode Continuous Forward Current Operating Junction Temperature Storage Temperature Range TC=100°C TC=25°C Typical Unit 100 V ±20 V 6.5 A 4.5 A 20 A 6.5 A 150 °C -55 ~ 150 °C Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA IDSS VGS(th) Zero Gate Voltage Drain Current VDS=80V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS,ID=250uA...