Triacs. BTA12-800C4G Datasheet

BTA12-800C4G Triacs. Datasheet pdf. Equivalent


ON Semiconductor BTA12-800C4G
BTA12-600C4G,
BTA12-800C4G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On-State Current Rating of 12 Amperes RMS at 85°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 100 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt 6.0 A/ms minimum at 125°C
Internally Isolated (2500 VRMS)
Indicates UL Registered — File #E69369
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffState Voltage (Note 1) VDRM,
V
(TJ = 40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
BTA12600C4G
600
BTA12800C4G
800
On-State RMS Current
IT(RMS)
12
A
(Full Cycle Sine Wave, 60 Hz, TC = 85°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
120
A
40
A2sec
Peak Gate Current (TJ = 125°C, t = 20ms) IGM
2.0
A
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ 40 to +125 °C
Storage Temperature Range
Tstg 40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. 30%, TA = 25°C)
Viso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
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TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
MARKING
DIAGRAM
123
x
A
Y
WW
G
TO220AB
CASE 221A
STYLE 12
BTA12xCG
AYWW
= 6 or 8
= Assembly Location
= Year
= Work Week
= PbFree Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
No Connection
ORDERING INFORMATION
Device
BTA12600C4G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTA12800C4G
TO220AB 50 Units / Rail
(PbFree)
*For additional information on our PbFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
April, 2012 Rev. 1
Publication Order Number:
BTA12600C4/D


BTA12-800C4G Datasheet
Recommendation BTA12-800C4G Datasheet
Part BTA12-800C4G
Description Triacs
Feature BTA12-800C4G; BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance fu.
Manufacture ON Semiconductor
Datasheet
Download BTA12-800C4G Datasheet




ON Semiconductor BTA12-800C4G
BTA12600C4G, BTA12800C4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase (AC)
JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
2.5
60
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
5.0
2.0
ON CHARACTERISTICS
Peak On-State Voltage
ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VTM
1.55
IGT
25
25
25
50
Latching Current (VD = 12 V, IG = 60 mA, IG4 = 120 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IL
40
80
40
40
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VGT
1.3
1.3
1.3
1.3
Gate NonTrigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 30 W, TJ = +125°C)
All Four Quadrants
VGD
0.2
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Current (TC = +125°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +125°C)
IH
di/dt(c)
dv/dt
25
6.0
100
Unit
°C/W
°C
Unit
mA
mA
V
mA
mA
V
V
mA
A/ms
V/ms
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2



ON Semiconductor BTA12-800C4G
BTA12600C4G, BTA12800C4G
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT
() IGT
GATE
MT1
REF
() MT2
(+) IGT
GATE
MT1
REF
() MT2
Quadrant I
+ IGT
Quadrant III
() IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
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3





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