isc N-Channel MOSFET Transistor
AOD476
FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS=20V(Min)...
isc N-Channel MOSFET
Transistor
AOD476
FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS=20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 21mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage-Continuous
±16
V
ID
Drain Current-Continuous
25
A
IDM
Drain Current-Single Pluse
75
A
PD
Total Dissipation @TC=25℃
33.3
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.5
℃/W
isc website:www.iscsemi.com
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 16V; VGS= 0 VDS= 16V; VGS= 0@TJ=55℃
IS= 1A; VGS= 0
AOD476
MIN MAX UNIT
20
V
0.6
2.0
V
21
mΩ
±100 nA
1 5
μA
1
V
NOTICE: ISC reserves the rights to make changes ...