AOD538

AOD538/AOI538 30V N-Channel αMOS™ General Description Trench Power AlphaMOS (αMOS™ LV) technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 70A < 3.1mΩ < 4.8mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 TO-251A TopView DPAK Bottom View Top View IPAK Bottom View D D D DS G Orderable Part Number AOD538 AOI538 DG S G DS G SD G S Package Type TO-252 TO-251A Form Tape & Reel Tube Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 54 280 34 27 36 65 36 93 46 6.2 4 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.3 Max 20 50 1.6 Units °C/W °C/W °C/W Rev.2.0: May 2018 ...