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AOD2610E

Alpha & Omega Semiconductors

60V N-Channel MOSFET

AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS...


Alpha & Omega Semiconductors

AOD2610E

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Description
AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Low Eoss ESD protected RoHS and Halogen-Free Compliant Applications High efficiency power supply Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 46A < 9.5mΩ < 13.3mΩ HBM Class 2 TO-252 TO-251A TO251B DPAK IPAK D Top View Bottom View Top View Bottom View Top View Bottom View D D S G G S AOD2610E Orderable Part Number AOD2610E AOI2610E AOY2610E D S D G G D S AOI2610E Package Type TO-252 TO-251A TO-251B S GD AOY2610E Form Tape & Reel Tube Tube D G G SD S Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 46 36.5 110 19 15 17 43 72 59.5 23.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-Sta...




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