60V N-Channel MOSFET
AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS...
Description
AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT TM
General Description
Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Low Eoss ESD protected RoHS and Halogen-Free Compliant
Applications
High efficiency power supply Secondary synchronus rectifier
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
60V 46A < 9.5mΩ < 13.3mΩ
HBM Class 2
TO-252
TO-251A
TO251B
DPAK
IPAK
D
Top View
Bottom View
Top View
Bottom View
Top View
Bottom View
D D
S G
G S
AOD2610E
Orderable Part Number
AOD2610E AOI2610E AOY2610E
D
S D G
G D S
AOI2610E
Package Type
TO-252 TO-251A TO-251B
S GD
AOY2610E
Form
Tape & Reel Tube Tube
D G
G
SD
S
Minimum Order Quantity
2500 4000 4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
VDS Spike I
10µs
TC=25°C Power Dissipation B TC=100°C
VGS ID
IDM IDSM
IAS EAS VSPIKE PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 46 36.5 110 19 15 17 43 72 59.5 23.5 6.2 4.0
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-Sta...
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