isc N-Channel MOSFET Transistor
AOD4182
FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage-
: VDSS=80V(Min...
isc N-Channel MOSFET
Transistor
AOD4182
FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage-
: VDSS=80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =15.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
53
A
IDM
Drain Current-Single Pluse
85
A
PD
Total Dissipation @TC=25℃
100
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.5
℃/W
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isc N-Channel MOSFET
Transistor
AOD4182
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=20A VGS= 10V; ID=20A@TJ=125℃
VGS= ±25V;VDS= 0
VDS=80V; VGS= 0 VDS=80V; VGS= 0@TJ=55℃
IS= 1A; VGS= 0
MIN MAX UNIT
80
V
2.8
4.2
V
15.5 28
mΩ
±100 nA
10 50
μA
1
V
NOTICE： ISC reserv...
