isc P-Channel MOSFET Transistor
AOD4185
FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(...
isc P-Channel MOSFET
Transistor
AOD4185
FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-40
A
IDM
Drain Current-Single Pluse
-115
A
PD
Total Dissipation @TC=25℃
62.5
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.4
℃/W
isc website:www.iscsemi.com
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isc P-Channel MOSFET
Transistor
AOD4185
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= -0.25mA
-40
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= -0.25mA
VGS= -10V; ID= -20A VGS= -10V; ID= -20A@TJ=125℃
VGS= ±20V;VDS= 0
VDS= -40V; VGS= 0 VDS= -40V; VGS= 0@TJ=55℃
IS= -1A; VGS= 0
-1.7
-3.0
V
15 23
mΩ
±100 nA
-1 -5
μA
-1.0...