N-Channel MOSFET. AOI66406 Datasheet

AOI66406 MOSFET. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AOI66406
AOD66406/AOI66406
40V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Level Driving
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
60A
< 6.1mΩ
< 9.4mΩ
Applications
• High Frequency Switching and Synchronous
Rectification
• DC-Motor Driver
100% UIS Tested
100% Rg Tested
TO-252
TO-251A
DPAK
IPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
D
D
S
G
S
AOD66406
Orderable Part Number
AOD66406
AOI66406
G
S
D
G
G
D
S
AOI66406
Package Type
TO-252
TO-251A
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.3mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
60
45
150
25
20
20
60
52
20.5
6.2
4.0
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
15
40
Maximum Junction-to-Case
Steady-State
RθJC
1.9
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2017
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Page 1 of 6


AOI66406 Datasheet
Recommendation AOI66406 Datasheet
Part AOI66406
Description 40V N-Channel MOSFET
Feature AOI66406; AOD66406/AOI66406 40V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technolog.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOI66406 Datasheet




Alpha & Omega Semiconductors AOI66406
AOD66406/AOI66406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
0.9
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=20V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Typ
2.0
5.0
7.5
7.4
70
0.7
1480
245
13
1.8
20
8.5
5.5
3
10
7.5
2
23
3
11
21
Max Units
V
1
µA
5
±100 nA
2.5
V
6.1
mΩ
9.1
9.4 mΩ
S
1
V
50
A
pF
pF
pF
2.7
30
nC
14
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2017
www.aosmd.com
Page 2 of 6



Alpha & Omega Semiconductors AOI66406
AOD66406/AOI66406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
6V
60
4.5V
4V
100
VDS=5V
80
60
40
3.5V
20
VGS=3V
0
0
1
2
3
4
5
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
15
40
125°C
20
25°C
0
1
2
3
4
5
6
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
10
VGS=4.5V
1.6
VGS=10V
1.4
ID=20A
5
VGS=10V
1.2
VGS=4.5V
ID=20A
1
0
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
20
ID=20A
15
125°C
10
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
5
25°C
1.0E-04
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.1.0: November 2017
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Page 3 of 6







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