AOD4T60

AOD4T60/AOI4T60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4T60 & AOI4T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested! 100% Rg Tested! 700V 16A < 2.1Ω 9nC 1.6µJ Top View TO252 DPAK Bottom View Top View TO251A IPAK Bottom View D D S G AOD4T60 G S S D G G G D S AOI4T60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain CurrentB TC=25°C TC=100°C ID 4 2.5 Pulsed Drain Current C IDM 16 Avalanche Current C,K IAR 4 Repetitive avalanche energy C,K EAR 8 Single pulsed avalanche energy H EAS 145 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 83 0.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.25 Maximum 50 0.5 1.5 D S Units V V A A mJ mJ V/ns W W/ o...