DatasheetsPDF.com

AOI4T60P Dataheets PDF



Part Number AOI4T60P
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 4A N-Channel MOSFET
Datasheet AOI4T60P DatasheetAOI4T60P Datasheet (PDF)

AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 700V 16A < 2.1Ω 8.3nC 1.6µJ TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View B.

  AOI4T60P   AOI4T60P



Document
AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 700V 16A < 2.1Ω 8.3nC 1.6µJ TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D S G AOD4T60P Orderable Part Number AOD4T60P AOI4T60P G S S GD G SD AOI4T60P Package Type TO-252 TO-251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 4 2.4 16 4 8 203 50 5 83 0.7 -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.25 Maximum 50 0.5 1.5 Units °C/W °C/W °C/W Rev.1.0: May 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 600 BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A gFS Forward Transconductance VSD Diode Forward Voltage VDS=40V, ID=2A IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=100V, f=1MHz Co(er) Co(tr) Effective output capacitance, energy related I Effective output capacitance, time related J VGS=0V, VDS=0 to 480V, f=1MHz Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz Rg Gate resistance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=4A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=4A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V V 700 0.55 V/ oC 1 µA 10 ±100 nA 4.2 5 V 1.75 2.1 Ω 3.2 S 0.78 1 V 4 A 16 A 522 pF 22 pF 20 pF 32 pF 2 pF 2.9 Ω 8.3 15 nC 3.4 nC 1.9 nC 21 ns 19 ns 25 ns 11 ns 309 ns 2.7 µC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.6A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9 100 7.5 10V VDS=40V -55°C .


AOD4T60P AOI4T60P ADuM4221


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)