Schottky Diode. C6D10065A Datasheet

C6D10065A Diode. Datasheet pdf. Equivalent


CREE C6D10065A
C6D10065A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
New 6th Generation Technology
Low Forward Voltage Drop (VF)
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (Ir)
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Higher System Level Efficiency
Increase System Power Density
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Server/Telecom Power Supplies
Industrial Power Supplies
Solar
UPS
Package
VRRM
=
IF (TC=155˚C)  =
Qc
=
650 V
10 A
34 nC
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C6D10065A
Package
TO-220-2
Marking
C6D10065
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
V
650
V
37
19
10
45
27
86
75
1250
1100
109
47
-55 to
+175
1
8.8
TC=25˚C
A TC=125˚C
TC=155˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP=10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
1
C6D10065A, Rev. -, 04-2019
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4


C6D10065A Datasheet
Recommendation C6D10065A Datasheet
Part C6D10065A
Description Silicon Carbide Schottky Diode
Feature C6D10065A; C6D10065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • New 6th Generation Technology.
Manufacture CREE
Datasheet
Download C6D10065A Datasheet




CREE C6D10065A
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF
Forward Voltage
IR
Reverse Current
QC
Total Capacitive Charge
C
Total Capacitance
1.27
1.37
2
15
1.50
1.60
50
200
34
611
67
53
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
nC
VR = 400 V, IF = 10A
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC
Capacitance Stored Energy
5.2
μJ
VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol Parameter
Typ. Unit
RθJC
Thermal Resistance from Junction to Case 1.38 °C/W
Note
Fig. 9
Typical Performance
20
18 TJ = -55°C
16 TJ = 25°C
TJ = 75°C
14 TJ = 125°C
TJ = 175°C
12
10
8
6
4
2
0
0.50 0.75 1.00 1.25 1.50 1.75 2.00
FowarVd VFVo(FltVa(g)Ve), VF (V)
Figure 1. Forward Characteristics
100
80
60
TJ = 175 °C
TJ = 125 °C
40
TJ = 75 °C
TJ = 25 °C
20
TJ = -55 °C
0
0 100 200 300 400 500 600 700 800
ReverVseVRVR(oV(ltVa)g)e, VR (V)
Figure 2. Reverse Characteristics
2
C6D10065A, Rev. -, 04-2019



CREE C6D10065A
Typical Performance
120
100
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
40
20
0
25 50 75 100 125 150 175
TTTCCC(˚˚°CCC)
Figure 3. Current Derating
5102
Conditions:
45 TJJ = 25 °C
10
40
358
30
256
20
154
102
5
0
0 100 200 300 400 55000 660000 770000
ReversVeVVRoR(lt(VaVg)e), VRR(V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
12104
10102
10
80
8
60
6
40
4
202
0
25 50 7755 110000 112255 115500 117755
TTTCCC (˚˚°CCC)
Figure 4. Power Derating
17800
Conditions:
160
600
TJ = 25 °C
Ftest = 1 MHz
140
Vtest = 25 mV
500
120
140000
38000
60
200
40
12000
0
0
1
10
100
1000
ReversseVeVRRol(ttaVagg)ee,,VR (V)
Figure 6. Capacitance vs. Reverse Voltage
3
C6D10065A, Rev. -, 04-2019







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