Power MOSFET. C3M0060065D Datasheet

C3M0060065D MOSFET. Datasheet pdf. Equivalent


CREE C3M0060065D
VDS
650 V
C3M0060065D
ID @ 25˚C
37 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
60 m
N-Channel Enhancement Mode
Features
Package
3rd Generation SiC MOSFET technology
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Easy to parallel and simple to drive
Enable new hard switching PFC topologies (Totem-Pole)
Applications
EV charging
Server power supplies
Solar PV inverters
UPS
DC/DC converters
Part Number
C3M0060065D
Package
TO-247-3
Marking
C3M0060065D
Maximum Ratings
Symbol
Parameter
VDSS
VGS
ID
Drain - Source Voltage, TC = 25 ˚C
Gate - Source voltage (Under transient events < 100 ns)
Continuous Drain Current, VGS = 15 V, TC = 25˚C
Continuous Drain Current, VGS = 15 V, TC = 100˚C
ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax
PD
TJ , Tstg
TL
Md
Power Dissipation, TC=25˚C, TJ = 175 ˚C
Operating Junction and Storage Temperature
Solder Temperature, 1.6mm (0.063”) from case for 10s
Mounting Torque, (M3 or 6-32 screw)
Value Unit Note
650
-8/+19
37
27
V
V Fig. 29
A Fig. 19
99
A
150
-40 to
+175
260
1
8.8
W Fig. 20
˚C
˚C
Nm
lbf-in
1
C3M0060065D Rev. 3, 07-2020


C3M0060065D Datasheet
Recommendation C3M0060065D Datasheet
Part C3M0060065D
Description Silicon Carbide Power MOSFET
Feature C3M0060065D; VDS 650 V C3M0060065D ID @ 25˚C 37 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS.
Manufacture CREE
Datasheet
Download C3M0060065D Datasheet




CREE C3M0060065D
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
V(BR)DSS Drain-Source Breakdown Voltage
650
VGSon Gate-Source Recommended Turn-On Voltage
15
VGSoff Gate-Source Recommended Turn-Off Voltage
-4
VGS(th)
Gate Threshold Voltage
1.8
2.3
1.9
IDSS
Zero Gate Voltage Drain Current
1
IGSS
Gate-Source Leakage Current
10
RDS(on) Drain-Source On-State Resistance
42
60
80
10
gfs
Transconductance
9
Ciss
Input Capacitance
1020
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
9
Max.
3.6
50
250
79
Unit
V
V
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
Static
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA, TJ = 175ºC
VDS = 650 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 13.2 A
VGS = 15 V, ID = 13.2 A, TJ = 175ºC
VDS= 20 V, IDS= 13.2 A
VDS= 20 V, IDS= 13.2 A, TJ = 175ºC
VGS = 0 V, VDS = 600 V
pF f = 1 MHz
VAC = 25 mV
Co(er)
Effective Output Capacitance (Energy Related)
95
Co(tr)
Effective Output Capacitance (Time Related)
132
pF VGS = 0 V, VDS = 0V to 400 V
Eoss
Coss Stored Energy
15
μJ VDS = 600 V, 1 MHz
EON
Turn-On Switching Energy (Body Diode)
110
EOFF
Turn Off Switching Energy (Body Diode)
22
EON
Turn-On Switching Energy (External SiC Diode)
63
EOFF
Turn Off Switching Energy (External SiC Diode)
28
VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A,
μJ RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC
FWD = Internal Body Diode of MOSFET
VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A,
μJ RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC
FWD = External SiC Diode
td(on)
tr
td(off)
tf
RG(int)
Qgs
Qgd
Qg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
9
VDD = 400 V, VGS = -4 V/15 V
20
ns ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH
17
Timing relative to VDS
Inductive load
8
3
Ω f = 1 MHz, VAC = 25 mV
14
VDS = 400 V, VGS = -4 V/15 V
14
nC ID = 13.2 A
46
Per IEC60747-8-4 pg 21
Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V
Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V
Note
Fig. 29
Fig. 11
Fig. 4,
5,6
Fig. 7
Fig. 17,
18
Note 1
Fig. 16
Fig. 25
Fig. 25
Fig. 26
Fig. 12
2
C3M0060065D Rev. 3, 07-2020



CREE C3M0060065D
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
Typ.
Max.
Unit
VSD
Diode Forward Voltage
5.1
V
4.8
V
IS
Continuous Diode Forward Current
23
A
IS, pulse
Diode pulse Current
trr
Reverse Recover time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
trr
Reverse Recover time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Thermal Characteristics
99
A
20
ns
190
nC
16
A
29
ns
181
nC
9
A
Test Conditions
VGS = -4 V, ISD = 6.6 A, TJ = 25 °C
VGS = -4 V, ISD = 6.6 A, TJ = 175 °C
VGS = -4 V, TC = 25˚C
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 13.2 A, VR = 400 V
dif/dt = 1200 A/µs, TJ = 175 °C
VGS = -4 V, ISD = 13.2 A, VR = 400 V
dif/dt = 750 A/µs, TJ = 175 °C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Typ.
0.99
40
Unit
°C/W
Test Conditions
Note
Fig. 8,
9, 10
Note
Fig. 21
3
C3M0060065D Rev. 3, 07-2020





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