2SK2611

SEMICONDUCTOR 2SK2611 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (9A, 900Volts) DESCRIPTION The Nell 2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS, relay drive and general purpose switching applications. D G D S TO-3PB FEATURES RDS(ON) = 1.10Ω @ VGS = 10V Ultra low gate charge(58nC typical) Low reverse transfer capacitance (CRSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 9 900 1.10 @ VGS = 10V 58 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR Drain to Source voltage Drain to Gate voltage TJ=25°C to 150°C RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current (VGS = 10V) TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=9A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=9A, L=15.0mH dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD Derating factor above 25°C TC=25°C TO-3PB TJ Operation junction ...