P-Channel Power MOSFET
Ordering number : ENA1907B
BMS3003
P-Channel Power MOSFET
–60V, –78A, 6.5mΩ, TO-220F-3SG
http://onsemi.com
Features
•...
Description
Ordering number : ENA1907B
BMS3003
P-Channel Power MOSFET
–60V, –78A, 6.5mΩ, TO-220F-3SG
http://onsemi.com
Features
ON-resistance RDS(on)1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings
Unit
--60
V
±20
V
--78
A
--312
A
2.0
W
40
W
150
°C
--55 to +150
°C
420 mJ
--60
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ.) 7529-001
10.16 3.18
4.7 2.54
BMS3003-1E
Product & Package Information
Package
: TO-220F-3SG
JEITA, JEDEC
: SC-67
Minimum Packing Quantity : 50 pcs./tube
Marking
Electrical Connection
2
3.3 15.87
6.68
15.8 3.23
A
1.47 MAX 0.8
123
2.54
2.54
12.98
2.76
DETAIL-A
(0.84)
0.5
1 : Gate
FRAME 2 : Drain
EMC
3 : Source
( 1.0)
TO-220F-3SG
MS3003
1
LOT No.
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
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