MS3003

Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features ON-resistance RDS(on)1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit --60 V ±20 V --78 A --312 A 2.0 W 40 W 150 °C --55 to +150 °C 420 mJ --60 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ.) 7529-001 10.16 3.18 4.7 2.54 BMS3003-1E Product & Package Information Package : TO-220F-3SG JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./tube Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 A 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 DETAIL-A (0.84) 0.5 1 : Gate FRAME 2 : Drain EMC 3 : Source ( 1.0) TO-220F-3SG MS3003 1 LOT No. 3 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. ...