CPC3714C

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 14 IDSS (min) 240mA Package SOT-89 Features Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC High Input Impedance High Breakdown Voltage: 350V Low VGS(off) Voltage: -1.6 to -3.9V Small Package Size: SOT-89 Applications Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Package Pinout D G D S (SOT-89) CPC3714 350V N-Channel Depletion-Mode FET Description The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3714 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3714 offers a low, 14 maximum, on-state resistance at 25ºC. The CPC3714 has a minimum breakdown voltage of 350VP and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary br...