Depletion-Mode FET. CPC3703C Datasheet

CPC3703C FET. Datasheet pdf. Equivalent


IXYS CPC3703C
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
250V
RDS(on)
(max)
4
IDSS (min)
360mA
Package
SOT-89
Features
High Breakdown Voltage: 250V
Low On-Resistance: 4max. at 25ºC
Low VGS(off) Voltage: -1.6 to -3.9V
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
High Input Impedance
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3703
250V N-Channel
Depletion-Mode FET
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3703-R07
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1


CPC3703C Datasheet
Recommendation CPC3703C Datasheet
Part CPC3703C
Description 250V N-Channel Depletion-Mode FET
Feature CPC3703C; INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250V RDS(on) (max) 4 IDSS (min) 360mA Package .
Manufacture IXYS
Datasheet
Download CPC3703C Datasheet




IXYS CPC3703C
INTEGRATED CIRCUITS DIVISION
CPC3703
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation 1
Junction Temperature
Operational Temperature, Ambient
Storage Temperature
Ratings
250
±15
600
1.1
125
-55 to +125
-55 to +125
Units
VP
VP
mA
W
ºC
ºC
ºC
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
1 Mounted on 1"x1"x0.062" FR4 board.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in RDS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Voltage Drop
Thermal Resistance (Junction to Ambient)
Symbol
V(BR)DSX
VGS(off)
dVGS(off) /dT
IGSS
ID(off)
IDSS
RDS(on)
dRDS(on) /dT
GFS
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
VSD
RJA
Conditions
VGS= -5V, ID=100µA
VDS= 5V, ID=1mA
VDS= 5V, ID=1A
VGS=±15V, VDS=0V
VGS= -5V, VDS=250V
VGS= -5V, VDS=200V, TA=125ºC
VGS= 0V, VDS=15V
VGS= 0V, ID=200mA
ID= 100mA, VDS = 10V
VGS= -5V
VDS= 25V
f= 1MHz
VDD= 25V
ID= 150mA
VGS= 0V to -10V
Rgen= 50
VGS= -5V, ISD=150mA
-
Min Typ Max Units
250
-
-
V
-1.6
-
-3.9
V
-
-
4.5 mV/ºC
-
- 100 nA
-
-
1
µA
-
-
1
mA
360
-
-
mA
-
-
4
-
-
1.1 %/ºC
225
-
-m
327 350
-
51
65
pF
27 35
23 35
8
20
-
17
25
ns
70
80
-
0.6 1.8
V
-
90
- ºC/W
Switching Waveform & Test Circuit
0V
INPUT
-10V
10%
VDS
OUTPUT
0V
ton
td(on)
tf
90%
10%
90%
toff
td(off)
tr
90%
10%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2
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R07



IXYS CPC3703C
INTEGRATED CIRCUITS DIVISION
CPC3703
PERFORMANCE DATA (@25ºC Unless Otherwise Noted)*
1000
900
800
700
600
500
400
300
200
100
0
0
Output Characteristics
VGS=-1.0
V =-1.5
GS
VGS=-2.0
VGS=-2.5
1
2
3
4
5
6
VDS (V)
Instantaneous Transfer Characteristics
(VDS=5V, TA=TJ)
350
300
250
200
+125ºC
150
+25ºC
100
-55ºC
50
0
-3.5
-3.0
-2.5
-2.0
-1.5
VGS (V)
RDS(on) Vs. Temperature
(VGS=0V, ID=200mA)
8
7
6
5
4
3
2
1
-50
0
50
100
150
Temperature (ºC)
-2.0
-2.5
-3.0
-3.5
-4.0
-50
VGS(off) Vs. Temperature
(VDS=10V, ID=1mA)
0
50
100
Temperature (ºC)
Maximum Rated Safe Operating Area
1
0.1
0.01
0.001
150
0.1
1
10
100
1000
VDS (V)
Transconductance vs. Drain Current
(VDS=10V, TA=TJ)
300
-55ºC
250
+25ºC
+125ºC
200
150
100
50
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Power Dissipation
vs. Ambient Temperature
20 40 60 80 100 120 140
Temperature (ºC)
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
600
525
450
CISS
375
300
225
150
75
COSS
CRSS
0
0
10
20
30
40
VDS (V)
On-Resistance vs. Drain Current
(VGS=0V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R07
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