INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
250V
RDS(on) (max)
4
IDSS (min) 360mA
Package SOT-89
Features
• H...
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
250V
RDS(on) (max)
4
IDSS (min) 360mA
Package SOT-89
Features
High Breakdown Voltage: 250V Low On-Resistance: 4 max. at 25ºC Low VGS(off) Voltage: -1.6 to -3.9V Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
High Input Impedance
Small Package Size: SOT-89
Applications
Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply
Package Pinout D
G D S
(SOT-89)
CPC3703
250V N-Channel Depletion-Mode FET
Description
The CPC3703 is an N-channel, depletion mode, field effect
transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications.
This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4 maximum, on-state resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and ...