N-Channel MOSFET. CPC3708CTR Datasheet

CPC3708CTR MOSFET. Datasheet pdf. Equivalent


IXYS CPC3708CTR
INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - V(BR)DSX
Max On-Resistance - RDS(on)
Max Power
SOT-89 Package
SOT-223 Package
Rating
350
14
1.1
2.5
Units
V
W
Features
350V Drain-to-Source Voltage
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
Low On-Resistance: 8(Typical) @ 25°C
Low VGS(off) Voltage
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-89 and SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Applications
LED Drive Circuits
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
Regulators
Circuit Symbol
D
G
S
CPC3708
350V N-Channel
Depletion Mode FET
Description
The CPC3708 is a N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3708Z) and an SOT-89
package (CPC3708C). Both utilize IXYS Integrated
Circuits Division’s proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical
on-resistance of 8and a drain-to-source voltage
of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Ordering Information
Part Number
CPC3708CTR
CPC3708ZTR
Description
SOT-89: Tape and Reel (1000/Reel)
SOT-223: Tape and Reel (1000/Reel)
Package Pinout:
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC3708-R03
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1


CPC3708CTR Datasheet
Recommendation CPC3708CTR Datasheet
Part CPC3708CTR
Description N-Channel MOSFET
Feature CPC3708CTR; INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(o.
Manufacture IXYS
Datasheet
Download CPC3708CTR Datasheet




IXYS CPC3708CTR
INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage (V(BR)DSX)
Gate-to-Source Voltage (VGS)
Total Package Dissipation 1
350
V
±20
V
SOT-89
SOT-223
Operational Temperature
Storage Temperature
1.1
W
2.5
-40 to +110 oC
-40 to +125 oC
1 Mounted on 1"x1" FR4 board.
CPC3708
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter
Symbol
Conditions
Min Typ Max Units
Gate-to-Source Voltage
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
VGS
VGS(off)
IDS(off)
ID
RDS(on)
IGSS
CISS
ID=60mA, VDS=5V
ID=2A, VDS=10V, VDS=100V
VGS= -5V, VDS=190V
VGS= -5V, VDS=350V
VGS= -2.7V, VDS=5V, VDS=50V
VGS= -0.57V, VDS=5V
VGS= -0.35V, IDS=50mA
VGS=±20V
VDS= VGS=0V
-1.005
-
-1.735
V
-2
-
-3.6
V
-
-
20
nA
-
-
1
A
-
-
5
mA
130
-
-
mA
-
8
14
-
-
100
nA
-
-
300
pF
Thermal Resistance
Package
Parameter
SOT-89 Junction to Case
Junction to Ambient
SOT-223 Junction to Case
Junction to Ambient
Symbol
RJC
RJA
RJC
RJA
Conditions
-
-
Min Typ Max Units
50
-
-
90
ºC/W
14
-
-
55
2
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R03



IXYS CPC3708CTR
INTEGRATED CIRCUITS DIVISION
CPC3708
CPC3708Z (SOT-223) PERFORMANCE DATA*
Output Characteristics
0.35
(TA=25ºC)
0.30
0.25
0.20
VGS=-0.5
VGS=-1
VGS=-1.5
VGS=-2
0.15
0.10
0.05
0.00
0
1
2
3
4
VDS (V)
On-Resistance vs. Drain Current
(VGS=0V)
20
15
Transconductance vs Drain Current
300
TA=-40ºC
250
TA=25ºC
200
TA=125ºC
(VDS=10V)
10
150
100
5
50
0
0
5
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0
ID (A)
50
100
150
ID (mA)
250
200
150
100
50
0
-3.0
Transfer Characteristics
(VDS=10V)
TA=125ºC
TA=25ºC
TA=-40ºC
-2.5
-2.0
-1.5
VGS (V)
VGS(off) vs. Temperature
(VDS=10V, ID=2PA)
-2.3
-2.4
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
-1.0
-40 -20 0 20 40 60 80 100
Temperature (ºC)
On-Resistance vs. Temperature
(VGS=0V, ID=100mA)
12
11
10
9
8
7
6
5
4
-40 -20
0 20 40 60
Temperature (ºC)
80 100
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
300
250
200
CISS
COSS
CRSS
150
100
50
0
0
5
10 15 20 25 30
VDS (V)
1
0.1
0.01
0.001
1
Forward Safe Operating Bias
(VGS=0V, DC Load, TC=25ºC)
Limited by
Device Channel
Saturation
Limited by
Device RDS(on)
10
100
VDS (V)
1000
*The Performance data shown in the graphs above is typical of device performance in SOT-223 Package. For guaranteed parameters not indicated in the written
specifications, please contact our application department.
R03
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