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CPC3730C Dataheets PDF



Part Number CPC3730C
Manufacturers IXYS
Logo IXYS
Description N-Channel FET
Datasheet CPC3730C DatasheetCPC3730C Datasheet (PDF)

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • RDS(on) 35 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is .

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • RDS(on) 35 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3730 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730 offers a low, 35 maximum, on-state resistance at 25ºC. The CPC3730 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3730CTR Description N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout D G D S (SOT-89) Circuit Symbol D G S DS-CPC3730-R01 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION CPC3730 Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Power Dissipation 1 350 VP ±15 VP 600 mA 1.4 W Junction Temperature +125 ºC Operational Temperature -55 to +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on FR4 board 1"x1"x0.062" Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements. Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperatures Gate Body Leakage Current Drain-to-Source Leakage Current Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperatures Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Source-Drain Diode Voltage Drop Thermal Resistance (Junction to Ambient) V(BR)DSX VGS(off) dVGS(off)/dT IGSS ID(off) IDSS RDS(on) dRDS(on)/dT GFS CISS COSS CRSS td(on) tr td(off) tf VSD RJA VGS= -5V, ID=100µA IDS= 5V, ID=1mA VDS= 5V, ID=1A VGS=±15V, VDS=0V VGS= -5V, VDS=350V VGS= -5V, VDS=280V, TA=125ºC VGS= 0V, VDS=15V VGS= 0V, ID=140mA VGS= 0V, ID=140mA ID= 100mA, VDS = 10V VGS= -5V VDS= 25V f= 1MHz VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50 VGS= -5V, ISD= 150mA - Min Typ Max Units 350 - - VP -1.6 - -3.9 V - - 4.5 mV/ºC - - 100 nA - - 1 A - - 1 mA 140 - - mA - - 35  - - 1.1 %/ºC 150 - - m 100 200 - 20 100 pF 5 80 20 10 - 20 - ns 50 - 0.6 1.8 V - 90 - ºC/W Thermal Characteristics Thermal Impedance Junction to ambient Junction to case Symbol JA JC Rating 90 50 Units ºC/W ºC/W Switching Waveform & Test Circuit 0V INPUT -10V 10% VDS OUTPUT 0V ton td(on) tf 90% 10% 90% toff td(off) tr 90% 10% PULSE GENERATOR Rgen INPUT VDD RL OUTPUT D.U.T. 2 www.ixysic.com R01 INTEGRATED CIRCUITS DIVISION CPC3730 150 135 120 105 90 75 60 45 30 15 0 0 Output Characteristics (TA=25ºC) VGS=0.0 VGS=-1.0 VGS=-1.5 VGS=-2.0 1 2 3 4 5 6 VDS (V) ID (mA) PERFORMANCE DATA* Transfer Characteristics (VDS=5V) 140 120 100 +125ºC 80 +25ºC 60 -40ºC 40 20 0 -3.0 -2.5 -2.0 -1.5 -1.0 VGS (V) GS(off) V (V) 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -40 V vs. Temperature GS(off) (VDS=10V, ID=1mA) 0 40 80 120 Temperature (ºC) ID (mA) RON (:) 42 36 30 24 18 12 6 0 -40 RON vs. Temperature (VGS=0V, ID=80mA) Power Dissipation vs. Ambient Temperature 1.6 Max Rated Safe Operating Area 1 1.4 Drain Current (A) 1.2 1.0 0.1 Power (W) 0.8 0.6 0.01 0.4 0.2 0.0 0.001 0 40 80 120 0 20 40 60 80 100 120 140 0.1 Temperature (ºC) Ambient Temperature (ºC) 1 10 .


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