Document
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
350VP
RDS(on) (max)
35
IDSS (min) 140mA
Package SOT-89
Features
• Low RDS(on) at Cold Temperatures • RDS(on) 35 max. at 25ºC • High Input Impedance
• High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89
Applications
• Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply
CPC3730
350V N-Channel Depletion-Mode FET
Description
The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3730 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications.
This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730 offers a low, 35 maximum, on-state resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information
Part # CPC3730CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel)
Package Pinout
D G
D S
(SOT-89)
Circuit Symbol D
G
S
DS-CPC3730-R01
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1
INTEGRATED CIRCUITS DIVISION
CPC3730
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Power Dissipation 1
350
VP
±15
VP
600
mA
1.4
W
Junction Temperature
+125
ºC
Operational Temperature
-55 to +125 ºC
Storage Temperature
-55 to +125 ºC
1 Mounted on FR4 board 1"x1"x0.062"
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperatures Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperatures Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Source-Drain Diode Voltage Drop Thermal Resistance (Junction to Ambient)
V(BR)DSX VGS(off) dVGS(off)/dT IGSS
ID(off)
IDSS RDS(on) dRDS(on)/dT
GFS CISS COSS CRSS td(on)
tr td(off)
tf VSD RJA
VGS= -5V, ID=100µA IDS= 5V, ID=1mA VDS= 5V, ID=1A VGS=±15V, VDS=0V
VGS= -5V, VDS=350V VGS= -5V, VDS=280V, TA=125ºC
VGS= 0V, VDS=15V VGS= 0V, ID=140mA VGS= 0V, ID=140mA ID= 100mA, VDS = 10V
VGS= -5V VDS= 25V f= 1MHz
VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50
VGS= -5V, ISD= 150mA -
Min Typ Max Units
350
-
-
VP
-1.6
-
-3.9
V
-
-
4.5 mV/ºC
-
- 100 nA
-
-
1
A
-
-
1
mA
140
-
-
mA
-
-
35
-
-
1.1 %/ºC
150
-
-
m
100 200
-
20 100 pF
5
80
20
10
-
20
-
ns
50
-
0.6 1.8
V
-
90
- ºC/W
Thermal Characteristics
Thermal Impedance Junction to ambient Junction to case
Symbol
JA JC
Rating 90 50
Units ºC/W ºC/W
Switching Waveform & Test Circuit
0V INPUT
-10V
10%
VDS
OUTPUT 0V
ton
td(on)
tf
90%
10%
90%
toff
td(off)
tr
90%
10%
PULSE GENERATOR
Rgen
INPUT
VDD RL OUTPUT
D.U.T.
2
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R01
INTEGRATED CIRCUITS DIVISION
CPC3730
150 135 120 105
90 75 60 45 30 15
0 0
Output Characteristics (TA=25ºC)
VGS=0.0
VGS=-1.0 VGS=-1.5
VGS=-2.0
1
2
3
4
5
6
VDS (V)
ID (mA)
PERFORMANCE DATA*
Transfer Characteristics
(VDS=5V)
140
120
100 +125ºC
80 +25ºC
60
-40ºC 40
20
0
-3.0
-2.5
-2.0
-1.5
-1.0
VGS (V)
GS(off) V (V)
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
-40
V vs. Temperature GS(off) (VDS=10V, ID=1mA)
0
40
80
120
Temperature (ºC)
ID (mA)
RON (:)
42 36 30 24 18 12
6 0
-40
RON vs. Temperature (VGS=0V, ID=80mA)
Power Dissipation
vs. Ambient Temperature
1.6
Max Rated Safe Operating Area
1
1.4
Drain Current (A)
1.2
1.0
0.1
Power (W)
0.8
0.6
0.01
0.4
0.2
0.0
0.001
0
40
80
120
0 20 40 60 80 100 120 140
0.1
Temperature (ºC)
Ambient Temperature (ºC)
1
10
.