Document
INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power
SOT-89 Package
SOT-223 Package
Rating 400 6
1.1 2.5
Units V
W
Features
• 400V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures • Low On-Resistance: 4.5 (Typical) @ 25°C • Low VGS(off) Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings • Flammability Rating UL 94 V-0
Applications
• LED Drive Circuits • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • Regulators
Circuit Symbol
D
G
S
CPC3909
400V, 6N-Channel Depletion-Mode FET
Description
The CPC3909 is an N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3909Z) and an SOT-89 package (CPC3909C). Both utilize IXYS Integrated Circuits Division’s proprietary vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies.
CPC3909Z and the CPC3909C have a typical on-resistance of 4.5 and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
Ordering Information
Part Number CPC3909CTR CPC3909ZTR
Description SOT-89: Tape and Reel (1000/Reel) SOT-223: Tape and Reel (1000/Reel)
Package Pinout:
D
4 123
GDS
Pin Number 1 2 3 4
Name GATE DRAIN SOURCE DRAIN
DS-CPC3909-R01
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1
INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage (V(BR)DSX) Gate-to-Source Voltage (VGS) Total Package Dissipation 1
400
V
15
V
SOT-89 SOT-223 Operational Temperature Storage Temperature
1.1 W
2.5 -40 to +110 oC -40 to +125 oC
1 Mounted on 1"x1" FR4 board.
CPC3909
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current On-Resistance Gate Leakage Current Gate Capacitance
Symbol VGS(off)
IDS(off)
ID RDS(on) IGSS CISS
Conditions
Min
ID=1A, VDS=5V
-1.4
VGS= -5.5V, VDS=240V
-
VGS= -5.5V, VDS=400V
-
VGS= 0V, VDS=5V
300
VGS= 0V, IDS=300mA
-
VGS=15V
-
VDS= VGS=0V
-
Typ Max Units
-
-3.1
V
-
20
nA
-
1
A
-
-
mA
4.5
6
-
100
nA
-
275
pF
Thermal Impedance
Device
Parameter
SOT-89 (CPC3909C) Junction to Case
Junction to Ambient
SOT-223 (CPC3909Z) Junction to Case
Junction to Ambient
Symbol JC JA JC JA
Conditions -
-
Min Typ Max Units
50
-
-
90
ºC/W
14
-
-
55
2
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R01
INTEGRATED CIRCUITS DIVISION
CPC3909
PERFORMANCE DATA*
ID (A) Threshold Voltage (V)
Gm (mS)
Current (A) Current (A)
ID (A)
Instantaneous Transfer Characteristics (V =10V)
DS
1.0 -40ºC
0.8
25ºC 0.6
125ºC 0.4
0.2
0.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
VGS (V)
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5
-50 -25
Threshold Voltage (IDS=2PA)
0 25 50 75 100 125 150 Temperature (ºC)
Transconductance vs. Drain Current
(VGS=10V)
1.50
-40ºC
1.25
25ºC
1.00
0.75
125ºC 0.50
0.25
0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
ID (mA)
Forward Safe Operating Bias SOT-89 Package
1
Forward Safe Operating Bias SOT-223 Package
1
0.1
0.1
0.01
0.01
0.001 0.1
1
10
100
Voltage (V)
1000
0.001 0.1
1
10
100
Voltage (V)
1000
1.0 0.8 0.6 0.4 0.2 0.0
0
Output Characteristics
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-2V
VGS=-1.5V
1
2
3
4
5
VDS (V)
Power Dissipation (W) Power Dissipation (W)
1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
Power Dissipation vs. Ambient Temperature
SOT-89 Package
20 40 60 80 100 120 140 Temperature (ºC)
Power Dissipation vs. Ambient Temperature
SOT-223 Package
2.0
1.5
1.0
0.5
0.0 0 20 40 60 80 100 120 140 Temperature (ºC)
R01
*Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
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3
INTEGRATED CIRCUITS DIVISION
PERFORMANCE DATA*
CPC3909
On Resistance (:) On-Resistance (:) Blocking Voltage (VP)
On-Resistance vs. Drain Current (VGS=0V)
10
125ºC 8
6 25ºC
4
-40ºC 2
0
0.0
0.2
0.4
0.6
0.8
1.0
ID (mA)
On-Resistance vs. Temperature
(IL=300mA, VGS=0V)
10
9
8
7
6
5
4
3
2 -50 -25
0 25.