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CPC3909CTR Dataheets PDF



Part Number CPC3909CTR
Manufacturers IXYS
Logo IXYS
Description N-Channel MOSFET
Datasheet CPC3909CTR DatasheetCPC3909CTR Datasheet (PDF)

INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 400 6 1.1 2.5 Units V  W Features • 400V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 4.5 (Typical) @ 25°C • Low VGS(off) Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savin.

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 400 6 1.1 2.5 Units V  W Features • 400V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 4.5 (Typical) @ 25°C • Low VGS(off) Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings • Flammability Rating UL 94 V-0 Applications • LED Drive Circuits • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • Regulators Circuit Symbol D G S CPC3909 400V, 6N-Channel Depletion-Mode FET Description The CPC3909 is an N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3909Z) and an SOT-89 package (CPC3909C). Both utilize IXYS Integrated Circuits Division’s proprietary vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies. CPC3909Z and the CPC3909C have a typical on-resistance of 4.5 and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. Ordering Information Part Number CPC3909CTR CPC3909ZTR Description SOT-89: Tape and Reel (1000/Reel) SOT-223: Tape and Reel (1000/Reel) Package Pinout: D 4 123 GDS Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC3909-R01 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage (V(BR)DSX) Gate-to-Source Voltage (VGS) Total Package Dissipation 1 400 V 15 V SOT-89 SOT-223 Operational Temperature Storage Temperature 1.1 W 2.5 -40 to +110 oC -40 to +125 oC 1 Mounted on 1"x1" FR4 board. CPC3909 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements. Electrical Characteristics @25oC (Unless Otherwise Specified) Parameter Gate-to-Source Off Voltage Drain-to-Source Leakage Current Drain Current On-Resistance Gate Leakage Current Gate Capacitance Symbol VGS(off) IDS(off) ID RDS(on) IGSS CISS Conditions Min ID=1A, VDS=5V -1.4 VGS= -5.5V, VDS=240V - VGS= -5.5V, VDS=400V - VGS= 0V, VDS=5V 300 VGS= 0V, IDS=300mA - VGS=15V - VDS= VGS=0V - Typ Max Units - -3.1 V - 20 nA - 1 A - - mA 4.5 6  - 100 nA - 275 pF Thermal Impedance Device Parameter SOT-89 (CPC3909C) Junction to Case Junction to Ambient SOT-223 (CPC3909Z) Junction to Case Junction to Ambient Symbol JC JA JC JA Conditions - - Min Typ Max Units 50 - - 90 ºC/W 14 - - 55 2 www.ixysic.com R01 INTEGRATED CIRCUITS DIVISION CPC3909 PERFORMANCE DATA* ID (A) Threshold Voltage (V) Gm (mS) Current (A) Current (A) ID (A) Instantaneous Transfer Characteristics (V =10V) DS 1.0 -40ºC 0.8 25ºC 0.6 125ºC 0.4 0.2 0.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 VGS (V) 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -50 -25 Threshold Voltage (IDS=2PA) 0 25 50 75 100 125 150 Temperature (ºC) Transconductance vs. Drain Current (VGS=10V) 1.50 -40ºC 1.25 25ºC 1.00 0.75 125ºC 0.50 0.25 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID (mA) Forward Safe Operating Bias SOT-89 Package 1 Forward Safe Operating Bias SOT-223 Package 1 0.1 0.1 0.01 0.01 0.001 0.1 1 10 100 Voltage (V) 1000 0.001 0.1 1 10 100 Voltage (V) 1000 1.0 0.8 0.6 0.4 0.2 0.0 0 Output Characteristics VGS=0V VGS=-0.5V VGS=-1V VGS=-2V VGS=-1.5V 1 2 3 4 5 VDS (V) Power Dissipation (W) Power Dissipation (W) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Power Dissipation vs. Ambient Temperature SOT-89 Package 20 40 60 80 100 120 140 Temperature (ºC) Power Dissipation vs. Ambient Temperature SOT-223 Package 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 Temperature (ºC) R01 *Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC. www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION PERFORMANCE DATA* CPC3909 On Resistance (:) On-Resistance (:) Blocking Voltage (VP) On-Resistance vs. Drain Current (VGS=0V) 10 125ºC 8 6 25ºC 4 -40ºC 2 0 0.0 0.2 0.4 0.6 0.8 1.0 ID (mA) On-Resistance vs. Temperature (IL=300mA, VGS=0V) 10 9 8 7 6 5 4 3 2 -50 -25 0 25.


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