CPC3909ZTR

INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 400 6 1.1 2.5 Units V  W Features 400V Drain-to-Source Voltage Depletion Mode Device Offers Low RDS(on) at Cold Temperatures Low On-Resistance: 4.5 (Typical) @ 25°C Low VGS(off) Voltage High Input Impedance Low Input and Output Leakage Small Package Size SOT-89 and SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Flammability Rating UL 94 V-0 Applications LED Drive Circuits Telecommunications Normally On Switches Ignition Modules Converters Security Power Supplies Regulators Circuit Symbol D G S CPC3909 400V, 6N-Channel Depletion-Mode FET Description The CPC3909 is an N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3909Z) and an SOT-89 package (CPC3909C). Both utilize IXYS Integrated Circuits Division’s proprietary vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies. CPC3909Z and the CPC3909C have a typical on-resistance of 4.5 and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. O...