CPC3980Z

INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features High Breakdown Voltage: 800V Low On-Resistance: 45 max. at 25ºC Low VGS(off) Voltage: -1.4 to -3.1V High Input Impedance Small Package Size: SOT-223 Applications Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Current Regulators Package Pinout D 4 123 GDS CPC3980 N-Channel Depletion-Mode Vertical DMOS FET Description The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3980 ideal for use in high-power applications. The CPC3980 is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division’s Solid State Relays for industrial and telecommunications applications. The CPC3980 is available in the SOT-223 package. Ordering Information Part # CPC3980ZTR Description SOT-223: Tape and Reel (1000/Reel) Circuit Symbol D G S DS-CPC3980-R02 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage 800 V ...