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CPC3982TTR

IXYS

N-Channel MOSFET

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features • ...


IXYS

CPC3982TTR

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Description
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features High Breakdown Voltage: 800V Low VGS(off) Voltage: -1.4V to -3.1V Depletion Mode Device Offers Low RDS(on) at Cold Temperatures High Input Impedance Small Package Size: SOT-23 Flammability Rating UL 94 V-0 Applications Constant Current Regulator Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply CPC3982 800V, 380 N-Channel Depletion-Mode FET Description The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3982 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3982 has a minimum breakdown voltage of 800V, and is available in an SOT-23 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3982TTR ...




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