INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
800V
RDS(on) (max)
380
IDSS (min) 20mA
Package SOT-23
Features
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INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
800V
RDS(on) (max)
380
IDSS (min) 20mA
Package SOT-23
Features
High Breakdown Voltage: 800V Low VGS(off) Voltage: -1.4V to -3.1V Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures High Input Impedance Small Package Size: SOT-23 Flammability Rating UL 94 V-0
Applications
Constant Current
Regulator Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply
CPC3982
800V, 380 N-Channel Depletion-Mode FET
Description
The CPC3982 is an N-channel, depletion mode, field effect
transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3982 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications.
This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules.
The CPC3982 has a minimum breakdown voltage of 800V, and is available in an SOT-23 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information
Part # CPC3982TTR
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