Power Relay. CPC1977J Datasheet

CPC1977J Relay. Datasheet pdf. Equivalent


IXYS CPC1977J
INTEGRATED CIRCUITS DIVISION
Characteristics
Parameter
Blocking Voltage
Load Current, TA=25°C:
With 5°C/W Heat Sink
No Heat Sink
On-Resistance (max)
Thermal Resistance,
Junction-to-Case, JC
Rating
600
3.1
1.25
1
0.35
Units
VP
Arms / ADC
°C/W
Features
3.1Arms Load Current with 5°C/W Heat Sink
Low 1On-Resistance
600VP Blocking Voltage
2500Vrms Input/Output Isolation
Low Thermal Resistance: JC = 0.35 °C/W
Isolated, Low Thermal Impedance Ceramic Pad for
Heat Sink Applications
Low Drive Power Requirements
Arc-Free With No Snubbing Circuits
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Applications
Industrial Controls / Motor Control
Robotics
Medical Equipment—Patient/Equipment Isolation
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Transportation Equipment
Aerospace/Defense
Approvals
UL 508 Recognized Component: File E69938
Pin Configuration
e3
CPC1977
600V Single-Pole, Normally Open
Power Relay
Description
IXYS Integrated Circuits Division and IXYS have
combined to bring OptoMOS® technology, reliability
and compact size to a new family of high-power Solid
State Relays.
As part of this family, the CPC1977 single-pole
normally open (1-Form-A) Solid State Power Relay is
rated for up to 3.1Arms continuous load current with a
5°C/W heat sink.
The CPC1977 employs optically coupled MOSFET
technology to provide 2500Vrms of input to output
isolation. The optically coupled outputs, that use
patented OptoMOS architecture, are controlled by a
highly efficient infrared LED. The combination of low
on-resistance and high load current handling
capability makes this relay suitable for a variety of high
performance switching applications.
The unique i4-PAC package pioneered by IXYS
enables Solid State Relays to achieve the highest load
current and power ratings. This package features a
unique IXYS process where the silicon chips are soft
soldered onto the Direct Copper Bond (DCB)
substrate instead of the traditional copper leadframe.
The DCB ceramic, the same substrate used in high
power modules, not only provides 2500Vrms isolation
but also very low junction-to-case thermal resistance
(0.35 °C/W).
Ordering Information
Part
CPC1977J
Description
i4-PAC Package (25 per tube)
Switching Characteristics
Form-A
IF
ILOAD
90%
ton
10%
toff
DS-CPC1977-R09
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CPC1977J Datasheet
Recommendation CPC1977J Datasheet
Part CPC1977J
Description Power Relay
Feature CPC1977J; INTEGRATED CIRCUITS DIVISION Characteristics Parameter Blocking Voltage Load Current, TA=25°C: With.
Manufacture IXYS
Datasheet
Download CPC1977J Datasheet




IXYS CPC1977J
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Absolute Maximum Ratings @ 25°C
Symbol
Blocking Voltage
Reverse Input Voltage
Input Control Current
Peak (10ms)
Input Power Dissipation
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
Ratings
600
5
100
1
150
2500
-40 to +85
-40 to +125
Units
VP
V
mA
A
mW
Vrms
°C
°C
CPC1977
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
1.2 Electrical Characteristics @ 25°C
Parameter
Output Characteristics
Load Current 1
Peak
Continuous
Continuous
Continuous
On-Resistance 2
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Input Characteristics
Input Control Current to Activate 3
Input Control Current to Deactivate
Input Voltage Drop
Reverse Input Current
Input/Output Characteristics
Capacitance, Input-to-Output
Conditions
t10ms
No Heat Sink
TC=25°C
TC=99°C
IF=10mA, IL=1A
VL=600VP
IF=20mA, VL=10V
VL=25V, f=1MHz
IL=1A
-
IF=5mA
VR=5V
-
Symbol Minimum Typical Maximum
Units
IL
IL(99)
RON
ILEAK
ton
toff
Cout
IF
IF
VF
IR
CI/O
15
AP
1.25
-
-
12.25
Arms / ADC
1.4
-
0.57
1
-
-
1
A
-
7.5
20
ms
-
0.085
5
-
2450
-
pF
-
-
10
mA
0.6
-
-
mA
0.9
1.2
1.4
V
-
-
10
A
-
1
-
pF
1 Higher load currents possible with proper heat sinking.
2 Measurement taken within 1 second of on-time.
3 For applications requiring high temperature operation (TC > 60ºC) an LED drive current of 20mA is recommended.
R09
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IXYS CPC1977J
INTEGRATED CIRCUITS DIVISION
CPC1977
2 Thermal Characteristics
Parameter
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Junction Temperature (Operating)
Conditions
-
Free Air
-
Symbol
JC
JA
TJ
Rating
0.35
33
-40 to +100
Units
°C/W
°C/W
°C
2.1 Thermal Management
Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface
material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient
thermal resistance of 12.5°C/W.
2.2 Heat Sink Calculation
Higher load currents are possible by using lower thermal resistance heat sink combinations.
Heat Sink Rating
θCA =
(TJ
-
TA)
I2
L(99)
I2
L
P
D(99)
- θJC
TJ = Junction Temperature (°C), TJ 100°C *
TA = Ambient Temperature (°C)
I = Load Current with Case Temperature @ 99°C (A )
L(99)
DC
IL = Desired Operating Load Current (ADC), IL IL(MAX)
θJC = Thermal Resistance, Junction to Case (°C/W) = 0.35°C/W
θCA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W)
PD(99) = Maximum power dissipation with case temperature held at 99ºC = 2.86W
* Elevated junction temperature reduces semiconductor lifetime.
NOTE: The exposed surface of the DCB substrate is not to be soldered.
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