Diode Bridge. CPC7557NTR Datasheet

CPC7557NTR Bridge. Datasheet pdf. Equivalent


IXYS CPC7557NTR
INTEGRATED CIRCUITS DIVISION
Bridge Characteristics
Parameter
Rating
Reverse Voltage
100
Forward Current
240
Units
V
mArms
Features
Monolithic Construction
Surface Mount Package
Applications
Telecommunications Protection Clamp
High Voltage Multiplexer/Switch
CPC7557
Diode Bridge
Description
The CPC7557N is an integrated diode bridge built on
IXYS Integrated Circuits Division’s High Voltage SOI
technology.
Ordering Information
Part
Description
CPC7557N 8-Pin SOIC in Tubes (100/Tube)
CPC7557NTR 8-Pin SOIC Tape & Reel (2000/Reel)
Pb
e3
CPC7557N Diagram
A/B
+
B/A
-
DS-CPC7557-R04
www.ixysic.com
1


CPC7557NTR Datasheet
Recommendation CPC7557NTR Datasheet
Part CPC7557NTR
Description Diode Bridge
Feature CPC7557NTR; INTEGRATED CIRCUITS DIVISION Bridge Characteristics Parameter Rating Reverse Voltage 100 Forwa.
Manufacture IXYS
Datasheet
Download CPC7557NTR Datasheet




IXYS CPC7557NTR
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Package Pinout
1
-
N/C
N/C
+
4
8
B
N/C
N/C
A
5
CPC7557
1.2 Pin Description
Pin#
1
2
3
4
5
6
7
8
Name
Description
Negative Bridge Output
N/C No Connection
N/C No Connection
+ Positive Bridge Output
A Input A
N/C No Connection
N/C No Connection
B Input B
1.3 Absolute Maximum Ratings
Unless Otherwise Specified all electrical ratings are at 25C
Parameter
Reverse Voltage
Diode Forward Current (Average)
Diode Forward Surge Current
Fusing Current
ESD, Human Body Model
Junction Temperature 1
Storage Temperature
1 Derate package for PDISS 120C/W.
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Symbol
VRRM
IF
IFSM
I2t
-
TJ
TSTG
Minimum
-
-
-
-
-
-
-65
Maximum
120
250
2
0.02
3
+150
+150
Units
V
mArms
A
A2s
kV
C
C
R04
www.ixysic.com
2



IXYS CPC7557NTR
INTEGRATED CIRCUITS DIVISION
CPC7557
1.4 Recommended Operating Conditions
Parameter
Diode Forward Current (Average)
Reverse Voltage
Operating Temperature Range
Thermal Impedance
Symbol
IF
VR
TA
JA
Minimum
-
-
-40
120
Maximum
240
100
+125
-
Units
mArms
V
C
C/W
1.5 General Conditions
Typical values are characteristic of the device at 25C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for TA=25C.
1.6 DC Electrical Characteristics
Parameter
Forward Current
Diode Forward Voltage Drop
Reverse Voltage Leakage Current
Conditions
-
IF = 40mA
IF = 250mA
VR=100V
Symbol
IF
VF
IR
Minimum
-
0.83
1
-
Typical
-
0.91
1.3
-
Maximum
240
0.97
1.49
1
Units
mArms
V
A
1.7 AC Electrical Characteristics
Parameter
Input Zero Bias Capacitance
Output Zero Bias Capacitance
Bridge Zero Bias Capacitance
Conditions
V+ V= 0V
Measured from VA to VB
VA = VB
Measured from V+ to V
V+ V= 0V Measured from
VA to V+/- and VB to V+/-
Symbol
CAB
Minimum Typical Maximum Units
-
4.4
12
pF
C+/
-
CA/+, CA/,
CB/+, CB/
-
8.3
20
pF
8.5
12
pF
2 Typical Performance Data
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-40
Bridge Forward Voltage (VF)
vs. Temperature
IF=250mA
IF=40mA
-20 0 20 40 60 80 100
Temperature (ºC)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
Diode Forward Voltage (VF)
vs. Temperature
IF=250mA
IF=40mA
-20 0 20 40 60 80 100
Temperature (ºC)
Diode Reverse Breakdown Voltage (VRRM)
vs. Temperature
152
150
148
146
144
142
140
138
-40 -20
0 20 40 60
Temperature (ºC)
80 100
3
www.ixysic.com
R04







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)