AOI403

isc P-Channel MOSFET Transistor AOI403 FEATURES ·Drain Current –ID=-70A@ TC=25℃ ·Drain Source Voltage- : VDSS=-30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -30 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous -70 A IDM Drain Current-Single Pluse -200 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= -0.25mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -20A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±12V;VDS= 0 VDS= -30V; VGS= 0 VDS= -30V; VGS= 0@TJ=55℃ IS= -1A; VGS= 0 AOI403 MIN MAX UNIT -30 V -1.5 -3.5 V 8.5 mΩ ±100 nA -1 -5 μA -1 V NOTICE： ISC reserves the righ...