FDD8870-F085

FDD8870-F085 N-Channel PowerTrench®MOSFET FDD8870-F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications DC/DC converters Features rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability Qualified to AEC Q101 RoHS Compliant D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 2) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 D G S Ratings 30 ±20 160 150 21 Figure 4 690 160 1.07 -55 to 175 Units V V A A A A mJ W W/oC oC 0.94...