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TLP2403 Dataheets PDF



Part Number TLP2403
Manufacturers Toshiba
Logo Toshiba
Description Photocoupler
Datasheet TLP2403 DatasheetTLP2403 Datasheet (PDF)

Photocouplers GaAℓAs Infrared LED & Photo IC TLP2403 TLP2403 1. Applications • High-Speed Digital Interfacing for Instrumentation and Control Devices • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP2403 consists of a high-output GaAℓAs light-emitting diode coupled with a high-speed photodiodetransistor chip. It is housed in the SO8 package. The TLP2403 uses a high-speed, high-gain detector element and thus is ideal for applications which require low-input current and high-speed.

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Photocouplers GaAℓAs Infrared LED & Photo IC TLP2403 TLP2403 1. Applications • High-Speed Digital Interfacing for Instrumentation and Control Devices • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP2403 consists of a high-output GaAℓAs light-emitting diode coupled with a high-speed photodiodetransistor chip. It is housed in the SO8 package. The TLP2403 uses a high-speed, high-gain detector element and thus is ideal for applications which require low-input current and high-speed data transmission. 3. Features (1) Package: SO8 (2) Operating temperature: -40 to 100  (3) Current transfer ratio: 400 % (min) @IF = 0.5 mA (4) Maximum output current: 60 mA (5) Propagation delay time: tpHL = 2 µs (typ.), tpLH = 4 µs (typ.) @ RL = 4.7 kΩ, IF = 0.5 mA (6) Isolation voltage: 3750 Vrms (min) (7) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5 (Note 1) Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4). ©2016 Toshiba Corporation 1 Start of commercial production 2009-02 2016-02-10 Rev.2.0 4. Packaging and Pin Assignment 11-5K1S 5. Internal Circuit 6. Principle of Operation 6.1. Mechanical Parameters Characteristics Creepage distances Clearance Internal isolation thickness Min Unit 4.0 mm 4.0  TLP2403 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND (Emitter) 6: Output (Collector) 7: Base 8: VCC ©2016 Toshiba Corporation 2 2016-02-10 Rev.2.0 TLP2403 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit LED Input forward current IF 20 mA Input forward current derating (Ta ≥ 85 ) ∆IF/∆Ta -0.67 mA/ Input forward current (pulsed) IFP (Note 1) 40 mA Input forward current derating (pulsed) (Ta ≥ 85 ) ∆IFP/∆Ta -1.0 mA/ Peak transient input forward current IFPT (Note 2) 1 A Peak transient input forward current derating (Ta ≥ 85 ) ∆IFPT/∆Ta -25 mA/ Input reverse voltage VR 5 V Input power dissipation PD 40 mW Input power dissipation derating (Ta ≥ 85 ) ∆PD/∆Ta -1.0 mW/ Detector Output current IO 60 mA Output current derating (Ta > 25 ) ∆IO/∆Ta -0.6 mA/ Output voltage VO -0.5 to 18 V Supply voltage VCC -0.5 to 18 Output power dissipation PO 100 mW Output power dissipation derating (Ta > 25 ) ∆PO/∆Ta -1.0 mW/ Common Operating temperature Topr -40 to 100  Storage temperature Tstg -55 to 125  Lead soldering temperature (10 s) Tsol 260  Isolation voltage AC, 60 s, R.H. ≤ 60 % BVS (Note 3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 % Note 2: Pulse width (PW) ≤ 1 µs, 300 pps Note 3: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input forward current IF 0.5  15 mA Output current IO   30 Supply voltage VCC   16 V Operating temperature Topr (Note 1) -40  100  Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this datasheet should also be considered. Note 1: Denotes the operating range, not the recommended operating condition. ©2016 Toshiba Corporation 3 2016-02-10 Rev.2.0 TLP2403 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = 0 to 100 ) Characteristics Input forward voltage Input forward voltage temperature coefficient Input reverse current Input capacitance High-level output current High-level supply current Low-level supply current Current transfer ratio Symbol Note VF ∆VF/∆Ta IR Ct IOH ICCH ICCL IO/IF Low-level output voltage VOL Note: All typical values are at Ta = 25 . Test Circuit Test Condition Min IF = 1.6 mA, Ta = 25  1.30 IF = 1.6 mA  VR = 5 V, Ta = 25   V = 0 V, f = 1 MHz, Ta = 25   VF = 0.8 V, VCC = VO = 18 V  IF = 0 mA, VCC = 5 V,  VO = Open IF = 1.6 mA, VCC = 5 V, 0.1 VO = Open IF = 0.5 mA, VCC .


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