TLP2768F

Photocouplers GaAℓAs Infrared LED & Photo IC TLP2768F TLP2768F 1. Applications Factory Automation (FA) Plasma Display Panels (PDPs) Measuring Instruments 2. General The Toshiba TLP2768F consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. The TLP2768F guarantees operation at up to 125  and on supplies from 2.7 V to 5.5 V. It is housed in the SDIP6 package. The TLP2768F has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±20 kV/µs. Leads of the TLP2768F is bend to satisfy 8.0 mm PC board spacing requirements. Absolute maximum ratings and electrical characteristics are the same as in the TLP2768. 3. Features (1) Inverter logic type (open collector output) (2) Package: SDIP6 (3) Operating temperature: -40 to 125  (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4.0 mA (max) (8) Common-mode transient immunity: ±20 kV/µs (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) : EN62368-1 (Pending) (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). 4. Packaging and Pin Configuration 11-5J101S ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 1: Anode 2: N.C. 3: C...