TLP2768A

Photocouplers GaAℓAs Infrared LED & Photo IC TLP2768A TLP2768A 1. Applications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. General The Toshiba TLP2768A consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. It is housed in a thin SO6L package of 2.3 mm(max). The TLP2768A has guaranteed the isolation voltage 5 kVrms and compliant with international safety standards for reinforced insulation. It guarantees operation at up to 125  and on supplies from 2.7 V to 5.5 V. The TLP2768A has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±20 kV/µs. 3. Features (1) Inverter logic type (open collector output) (2) Package: SO6L (3) Operating temperature: -40 to 125  (4) Data transfer rate: 20 MBd (typ.) (NRZ) (5) Threshold input current: 5.0 mA (max) (6) Supply current: 4 mA (max) (7) Common-mode transient immunity: ±20 kV/µs (min) (8) Isolation voltage: 5000 Vrms (min) (9) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-01 2017-12-26 Rev.9.0 4. Packaging (Note) TLP2768A TLP2768A(LF4) TLP2768A ...