Photocoupler. TLP284-4 Datasheet

TLP284-4 Photocoupler. Datasheet pdf. Equivalent

TLP284-4 Datasheet
Recommendation TLP284-4 Datasheet
Part TLP284-4
Description Photocoupler
Feature TLP284-4; TOSHIBA Photocoupler IRED & Photo-Transistor TLP284-4 Programmable Controllers AC/DC-Input Module Hy.
Manufacture Toshiba
Datasheet
Download TLP284-4 Datasheet




Toshiba TLP284-4
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP284-4
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP284-4
Unit: mm
TLP284-4 consists of photo transistor, optically coupled to two infrared
emitting diode connected inverse parallel, and can operate directly by AC
input current.
Since TLP284-4 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
Collector-emitter voltage : 80 V (min)
Current transfer ratio
: 50% (min)
Rank GB : 100% (min)
Isolation voltage
: 3750 Vrms (min)
Guaranteed performance over: -55 to 110 ˚C
UL-recognized
: UL 1577, File No.E67349
cUL-recognized
: CSA Component Acceptance Service No.5A
TOSHIBA
11-10F1
Weight: 0.19 g (typ.)
File No.E67349
VDE-approved
: EN 60747-5-5 (Note 1)
Pin Configuration (top view)
Note 1: When a VDE approved type is needed,
please designate the Option(V4).
1
16
2
15
Construction Mechanical Rating
3
14
Creepage Distance
Clearance
Insulation Thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
4
13
5
12
6
11
7
10
8
9
1,3,5,7
: Anode-
Cathode
2,4,6,8
: Cathode
Anode
9,11,13,15 : Emitter
10,12,14,16 : Collector
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2009-02
2019-06-17



Toshiba TLP284-4
Current Transfer Ratio
TLP284-4
TYPE
TLP284-4
Classification
(Note1)
Current Transfer Ratio (%)
(IC/IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
Marking of Classification
Blank
50
Rank GB
100
600
Blank , GB
600
GB
Note1: ex. Rank GB: TLP284-4 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP284-4 (GB): TLP284-4
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF(RMS)
±50
mA
Forward current derating (Ta 50°C)
ΔIF/°C
-0.67
mA/°C
Pulse forward current
(Note 1)
IFP
Diode power dissipation (1 circuit)
PD
±1
A
70
mW
Diode power dissipation derating (Ta 50°C)
(1 circuit)
ΔPD/°C
-0.93
mW/°C
Junction temperature
Tj
125
°C
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
Collector current
Collector power dissipation
(1 circuit)
VECO
IC
PC
7
V
50
mA
100
mW
Collector power dissipation derating (Ta 25°C)
(1 circuit)
ΔPC/°C
-1.0
mW/°C
Junction temperature
Tj
125
°C
Operating temperature range
Storage temperature range
Topr
-55 to 110
°C
Tstg
-55 to 125
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Total package power dissipation (1 circuit)
PT
170
mW
Total package power dissipation derating
(Ta 25°C) (1 circuit)
ΔPT/°C
-1.7
mW/°C
Isolation voltage
(Note 2)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width 100 μs, frequency 100 Hz
Note 2: AC, 60 s, R.H.60 %
Device considered a two terminal device: LED side pins shorted together and DETECTOR side pins shorted
together.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17



Toshiba TLP284-4
Electrical Characteristics (Ta = 25°C)
TLP284-4
Characteristic
Symbol
Test Condition
Min Typ Max Unit
Forward voltage
VF
IF = ±10 mA
1.0 1.15 1.3
V
Capacitance
CT
V = 0 V, f = 1 MHz
60
pF
Collector-emitter
breakdown voltage
V(BR)CEO IC = 0.5 mA
80
V
Emitter-collector
breakdown voltage
V(BR)ECO IE = 0.1 mA
7
V
Collector dark current
Capacitance
(collector to emitter)
(Note 2)
ICEO
CCE
VCE = 48 V,
Ambient light below
(100 x )
(Note 1)
0.01 0.1
(2) (10)
μA
VCE = 48 V, Ta = 85 °C
Ambient light below
(100 x )
(Note 1)
2
(4)
50
(50)
μA
V = 0 V, f = 1 MHz
10
pF
Note.1: Irradiation to marking side using standard light bulb.
Note 2: Because of the construction, leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
Symbol
Test Condition
MIn Typ. Max Unit
IC/IF
IF = ±5 mA, VCE = 5 V
50
600
%
Rank GB 100
600
IC/IF(sat)
IF = ±1 mA, VCE = 0.4 V
60
%
Rank GB 30
IC = 2.4 mA, IF = ±8 mA
0.4
VCE(sat)
IC = 0.2 mA, IF = ±1 mA
0.2
V
Rank GB —
0.4
IC(off)
VF = ± 0.7 V, VCE = 48 V
10
μA
IC(ratio)
IC (IF = -5 mA) / IC (IF = 5 mA)
(Note 1)
0.33
3
Note 1:
IC(ratio)
=
IC2(IF
IC1(IF
=
=
IF2, VCE
IF1, VCE
=
=
5V)
5V)
IF1
IF2
IC1
VCE
IC2
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-17







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