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TLP3406SRH Dataheets PDF



Part Number TLP3406SRH
Manufacturers Toshiba
Logo Toshiba
Description Photocouplers Photorelay
Datasheet TLP3406SRH DatasheetTLP3406SRH Datasheet (PDF)

Photocouplers Photorelay TLP3406SRH TLP3406SRH 1. Applications • Probe Cards • ATE (Automatic Test Equipment) • Measuring Instruments • High-Speed Logic IC Testers • High-Speed Memory Testers 2. General The TOSHIBA TLP3406SRH photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a S-VSON4T package. The TLP3406SRH features a very small on-resistance and on/off switching off current as high as 1.5 A, making it ideal for switching applications in high-speed t.

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Photocouplers Photorelay TLP3406SRH TLP3406SRH 1. Applications • Probe Cards • ATE (Automatic Test Equipment) • Measuring Instruments • High-Speed Logic IC Testers • High-Speed Memory Testers 2. General The TOSHIBA TLP3406SRH photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a S-VSON4T package. The TLP3406SRH features a very small on-resistance and on/off switching off current as high as 1.5 A, making it ideal for switching applications in high-speed testers. 3. Features (1) S-VSON4T: 2.0 (L) mm × 1.45 (W) mm × 1.3 (H) mm (2) Normally opened (1-Form-A) (3) OFF-state output terminal voltage: 30 V (min) (4) Operating voltage: 3 V (max) (5) ON-state current: 1.5 A (max) (6) ON-state resistance: 0.1 Ω (typ.), 0.2 Ω (max) (7) Isolation voltage: 500 Vrms (min) (8) Halogen-free For details, see "Devices in Halogen-Free Resin Packages" at the end of this datasheet. 4. Packaging and Pin Assignment 11-2E2 1: Anode 2: Cathode 3: Drain 4: Drain ©2018-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2019-02 2020-10-29 Rev.4.0 5. Internal Circuit TLP3406SRH 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit LED Applied input forward voltage VIN 6 V Input reverse voltage Input power dissipation Input power dissipation derating (Ta ≥ 25 �) VR PD ∆PD/∆Ta 6 50 mW -0.5 mW/� Junction temperature Tj 125 � Detector OFF-state output terminal voltage VOFF 30 V ON-state current ON-state current derating (Ta ≥ 25 �) ION ∆ION/∆Ta 1.5 A -15 mA/� ON-state current (pulsed) (t = 100 ms, Duty = 1/10) IONP 4.5 A Output power dissipation Output power dissipation derating (Ta ≥ 25 �) PO ∆PO/∆Ta 240 mW -2.4 mW/� Junction temperature Common Storage temperature Tj 125 � Tstg -40 to 125 � Operating temperature Topr -40 to 110 Lead soldering temperature (10 s) Tsol 260 Isolation voltage AC, 60 s, R.H. ≤ 60 % BVS (Note 1) 500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on..


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