Photocouplers Photorelay. TLP3412SRH Datasheet

TLP3412SRH Photorelay. Datasheet pdf. Equivalent

TLP3412SRH Datasheet
Recommendation TLP3412SRH Datasheet
Part TLP3412SRH
Description Photocouplers Photorelay
Feature TLP3412SRH; Photocouplers Photorelay TLP3412SRH TLP3412SRH 1. Applications • ATE (Automatic Test Equipment) • .
Manufacture Toshiba
Datasheet
Download TLP3412SRH Datasheet




Toshiba TLP3412SRH
Photocouplers Photorelay
TLP3412SRH
TLP3412SRH
1. Applications
• ATE (Automatic Test Equipment)
• Probe Cards
• Measuring Instruments
• High-Speed Logic IC Testers
• High-Speed Memory Testers
2. General
The TOSHIBA TLP3412SRH is a very small outline non-leaded photorelay suitable for surface-mount assembly.
It is housed in a S-VSON4T package. The TLP3412SRH has a Built-in input resistor, which eliminates an external
input resistor for space saving. Its features include low off-state current and low output pin capacitance.
3. Features
(1) S-VSON4T: 2.0 (L) mm × 1.45 (W) mm × 1.3 (H) mm
(2) Normally opened (1-Form-A)
(3) OFF-state output terminal voltage: 60 V (min)
(4) Operating voltage: 3 V (max)
(5) ON-state current: 400 mA (max)
(6) ON-state resistance: 1 (typ.), 1.5 (max)
(7) Isolation voltage: 500 Vrms (min)
4. Packaging and Pin Assignment
11-2E2
1: Anode
2: Cathode
3: Drain
4: Drain
©2018-2020
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2019-02
2020-10-29
Rev.4.0



Toshiba TLP3412SRH
5. Internal Circuit
TLP3412SRH
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
LED Applied input forward voltage
VIN
6
V
Input reverse voltage
VR
6
Input power dissipation
Input power dissipation derating
Junction temperature
(Ta 25 )
PD
PD/Ta
Tj
50
mW
-0.5
mW/
125
Detector OFF-state output terminal voltage
VOFF
60
V
ON-state current
ON-state current derating
(Ta 25 )
ION
ION/Ta
400
mA
-4
mA/
ON-state current (pulsed)
(t = 100 ms, Duty = 1/10)
IONP
1200
mA
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
(Ta 25 )
PO
PO/Ta
Tj
Tstg
240
-2.4
125
-40 to 125
mW
mW/
Operating temperature
Topr
-40 to 110
Lead soldering temperature
Isolation voltage
(10 s)
Tsol
260
AC, 60 s, R.H. 60 %
BVS
(Note 1)
500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against
by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on.
7. Recommended Operating Conditions (Note)
Characteristics
Symbol Note Min Typ. Max Unit
Supply voltage
Applied input forward voltage
ON-state current
Operating temperature
VDD
48
V
VIN
3.3
6
V
ION
400 mA
Topr
-20
100
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
©2018-2020
2
Toshiba Electronic Devices & Storage Corporation
2020-10-29
Rev.4.0



Toshiba TLP3412SRH
TLP3412SRH
8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
IR
Ct
IOFF
COFF
Note
Test Condition
VR = 5 V
V = 0 V, f = 1 MHz
VOFF = 60 V
VOFF = 50 V
V = 0 V, f = 1 MHz, t < 1 s
Min Typ. Max Unit
10
µA
30
pF
1
µA
1
nA
20
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Operating voltage
Turn-off voltage
ON-state resistance
Symbol
VFON
VFOFF
RON
Note
Test Condition
ION = 100 mA
IOFF = 10 µA
ION = 400 mA, VIN = 5 V, t < 1 s
Min Typ. Max Unit
1.5
3
V
0.8
1.5
V
1
1.5
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Total capacitance (input to output)
Isolation resistance
Isolation voltage
CS (Note 1) VS = 0 V, f = 1 MHz
RS (Note 1) VS = 500 V, R.H. 60 %
BVS (Note 1) AC, 60 s
1
pF
1014
500
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
11. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Turn-on time
Turn-off time
Symbol
tON
tOFF
Note
Test Condition
See Fig. 11.1.
RL = 200 , VDD = 20 V, VIN = 5 V
Min Typ. Max Unit
220 500
µs
50
200
Fig. 11.1 Switching Time Test Circuit and Waveform
©2018-2020
3
Toshiba Electronic Devices & Storage Corporation
2020-10-29
Rev.4.0







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