TLP351F

TOSHIBA Photocoupler IRED + Photo IC TLP351F Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter TLP351F Unit: mm The TOSHIBA TLP351F consists of an infrared light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP35F1 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351F is capable of “direct” gate drive of lower Power IGBTs. Peak output current: ±0.6 A (max) Guaranteed performance over temperature: −40 to 100°C Supply current: 2 mA (max) Power supply voltage: 10 to 30 V Threshold input current : IF = 5 mA (max) Switching time (tpLH/tpHL) : 700 ns (max) Common mode transient immunity: ±10 kV/μs Isolation voltage: 3750 Vrms UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). Construction mechanical rating 10.16mm pitch TLP351F type Creepage distance 8.0 mm (min) Clearance 8.0 mm (min) Insulation thickness 0.4 mm (min) TOSHIBA 11-10C402S Weight: 0.54 g (typ.) Pin Configuration (top view) 1 8 1: N.C. 2: Anode 2 7 3: Cathode 4: N.C. 5: GND 3 6 6: VO (output) 7: N.C. 4 5 8: VCC Truth Table Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L © 2019 1 Toshiba Electronic Devices & Storage Corporation Schematic IF 2+ VF 3− (Tr1) ICC VCC 8 IO (Tr2) VO 6 GND 5 A 0.1 μ...