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TLP351H Dataheets PDF



Part Number TLP351H
Manufacturers Toshiba
Logo Toshiba
Description Photocouplers
Datasheet TLP351H DatasheetTLP351H Datasheet (PDF)

Photocouplers GaAℓAs Infrared LED & Photo IC TLP351H,TLP351HF TLP351H,TLP351HF 1. Applications • Industrial Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP351H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125.The TLP351H has .

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Photocouplers GaAℓAs Infrared LED & Photo IC TLP351H,TLP351HF TLP351H,TLP351HF 1. Applications • Industrial Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP351H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125.The TLP351H has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and source current. The TLP351H is ideal for IGBT and power MOSFET gate drive. 3. Features (1) Output peak current: ±0.6 A (max) (2) Operating temperature: -40 to 125  (3) Supply current: 2 mA (max) (4) Supply voltage: 10 to 30 V (5) Threshold input current: 5 mA (max) (6) Propagation delay time: 700 ns (max) (7) Common-mode transient immunity: ±20 kV/µs (min) (8) Isolation voltage: 3750 Vrms (min) (9) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4). ©2016 Toshiba Corporation 1 Start of commercial production 2011-08 2016-10-19 Rev.8.0 4. Packaging (Note) TLP351H TLP351H(LF1,TP1) TLP351H,TLP351HF TLP351H(LF5,TP5) 11-10C4S TLP351HF 11-10C401S TLP351HF(LF4,TP4) 11-10C405S 11-10C402S 11-10C404S Note: Through-hole type: TLP351H, TLP351HF Lead forming option: (LF1), (LF4), (LF5) Taping option: (TP1), (TP4), (TP5) 5. Pin Assignment 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VO(Output) 7: N.C. 8: VCC ©2016 Toshiba Corporation 2 2016-10-19 Rev.8.0 6. Internal Circuit (Note) TLP351H,TLP351HF Note: A 0.1-µF bypass capacitor must be connected between pin 8 and pin 5. 7. Principle of Operation 7.1. Truth Table Input H L LED ON OFF M1 ON OFF M2 OFF ON Output H L 7.2. Mechanical Parameters Characteristics Creepage distances Clearance distances Internal isolation thickness 7.62-mm Pitch TLP351H 7.0 (min) 7.0 (min) 0.4 (min) 10.16-mm Pitch TLP351HF Unit 8.0 (min) mm 8.0 (min) 0.4 (min) ©2016 Toshiba Corporation 3 2016-10-19 Rev.8.0 TLP351H,TLP351HF 8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit LED Input forward current Input forward current derating Peak transient input forward current Peak transient input forward current derating Input reverse voltage Input power dissipation Input power dissipation derating Detector Peak high-level output current Peak low-level output current Output voltage Supply voltage Output power dissipation Output power dissipation derating (Ta ≥ 116 ) (Ta ≥ 110 ) (Ta ≥ 110 ) (Ta = -40 to 125 ) (Ta = -40 to 125 ) (Ta ≥ 110 ) IF ∆IF/∆Ta IFPT (Note 1) ∆IFPT/∆Ta VR PD ∆PD/∆Ta IOPH IOPL VO VCC PO ∆PO/∆Ta (Note 2) (Note 2) 20 -0.6 1 -25 5 40 -1.0 -0.6 +0.6 35 35 260 -6.5 mA mA/ A mA/ V mW mW/ A V mW mW/ Common Operating temperature Topr -40 to 125  Storage temperature Tstg -55 to 150 Lead soldering temperature (10 s) Tsol (Note 3) 260 Isolation voltage AC, 60 s, R.H. ≤ 60 %, Ta = 25  BVS (Note 4) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 µs, 300 pps Note 2: Exponential waveform. Pulse width ≤ 10 µs, f ≤ 15 kHz Note 3: ≥ 2 mm below seating plane. Note 4: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 9. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input on-state current Input off-state voltage Supply voltage Peak high-level output current Peak low-level output current Operating frequency IF(ON) (Note 1) 6.5 VF(OFF) 0 VCC (Note 2) 10 IOPH  IOPL  f (Note 3)   15 mA  0.8 V  30  -0.2 A  +0.2  25 kHz Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this devic.


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