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TTC017 Datasheet, Equivalent, NPN Transistor.NPN Transistor NPN Transistor |
| Part | TTC017 |
|---|---|
| Description | NPN Transistor |
| Feature | Bipolar Transistors Silicon NPN Epitaxia l Type
TTC017
1. Applications • Powe r Amplifiers • Power Switching 2. Fe atures (1) High DC current gain : hFE = 180 to 450 (IC = 0. 5 A) (2) Low col lector saturation voltage : VCE(sat) = 0. 5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1 A) 3. Packaging and Internal Circui t TTC017 New PW-Mold 1. Base 2. Coll ector (Heatsink) 3. Emitter Start of c ommercial production 2015-03 1 2015-0 3-24 Rev. 1. 0 TTC017 4. Absolute Maxi mum Ratings (Note) (Unless otherwise sp ecified, Ta = 25 ) Characteristics Symbol Rating Uni . |
| Manufacture | Toshiba |
| Datasheet |
| Part | TTC017 |
|---|---|
| Description | NPN Transistor |
| Feature | Bipolar Transistors Silicon NPN Epitaxia l Type
TTC017
1. Applications • Powe r Amplifiers • Power Switching 2. Fe atures (1) High DC current gain : hFE = 180 to 450 (IC = 0. 5 A) (2) Low col lector saturation voltage : VCE(sat) = 0. 5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1 A) 3. Packaging and Internal Circui t TTC017 New PW-Mold 1. Base 2. Coll ector (Heatsink) 3. Emitter Start of c ommercial production 2015-03 1 2015-0 3-24 Rev. 1. 0 TTC017 4. Absolute Maxi mum Ratings (Note) (Unless otherwise sp ecified, Ta = 25 ) Characteristics Symbol Rating Uni . |
| Manufacture | Toshiba |
| Datasheet |
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