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TC75S101FE

Toshiba

Single Operational Amplifier

TC75S101F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S101F, TC75S101FU, TC75S101FE Single Oper...


Toshiba

TC75S101FE

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Description
TC75S101F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S101F, TC75S101FU, TC75S101FE Single Operational Amplifier (Input and Output Full Range) Features Input and Output Full Range Low-input offset voltage : VIO = 3.0 mV (max.) Low-input bias current : II = 0.1 pA (typ.) Built-in phase-compensated op-amp, obviating the need for any external device Ultra-small package TC75S101F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VDD, VSS 6 V Differential input voltage DVIN ±6 V Input voltage VIN VDD to VSS V TC75S101F/FU Power dissipation PD TC75S101FE 200 mW 100 Operating temperature Storage temperature Topr -40 to 85 °C Tstg -55 to 125 °C SSOP5-P-0.95 TC75S101FU (SMV) SSOP5-P-0.65A TC75S101FE (USV) Product device does not use these for open-loop configuration. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. SON5-P-0.50 Weight SSOP5-P-0.95 : 14 mg (typ.) SSOP5-P-0.65A : 6.2 mg (typ.) SON5-P-0.50 : 3.0 mg (typ.) (ESV) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and...




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