TC75S51FE

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51FE TC75S51FE Single Operational Amplifier The TC75S51FE is a CMOS single-operation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and lowcurrent power supply; this differentiates this device from general-purpose bipolar op-amps. Features Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.) Built-in phase-compensated op-amp, obviating the need for any external device Ultra-compact package TC75S51FE SON5-P-0.50 (ESV) Weight SON5-P-0.50 : 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage Differential input voltage Input voltage Power dissipation Operating temperature Storage temperature VDD, VSS 7 V DVIN ±7 V VIN VDD to VSS V PD 100 mW Topr −40 to 85 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability dat...