AUIRF7739L2

AUTOMOTIVE GRADE AUIRF7739L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg (typical) 40V 700µ 1000µ 270A 220nC S S D G S S S S D S S Applicable DirectFET® Outline and Substrate Outline  L8 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7739L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform coupled with the latest ...