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FET Multiplexer/Demultiplexer. TC7MBL3253CFK Datasheet |
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![]() CMOS Digital Integrated Circuits Silicon Monolithic
TC7MBL3253CFK
TC7MBL3253CFK
1. Functional Description
• Dual 1-of-4 FET Multiplexer/Demultiplexer
2. General
The TC7MBL3253CFK is a low-voltage/low-capacitance CMOS dual 1-of-4 Multiplexer/Demultiplexer. The low
on-resistance of the switch allows connections to be made with minimal propagation delay time.
This device consists of two individual four-inputs multiplexer/demultiplexer with common select input (S1, S0)
and output enable (OE). The A input is connected to the B1 to B4 outputs as determined by the combination of
both the select input (S1, S0) and output enable (OE). When the output enable (OE) input is held at "H" level,
the switches are open regardless of the state of the select inputs, and a high-impedance state exists between the
switches.
All inputs are equipped with protection circuits against static discharge.
3. Features
(1) Operating voltage: VCC = 1.65 to 3.6 V
(2) ON capacitance: CI/O = 13 pF Switch On (typ.) @VCC = 3.0 V
(3) ON resistance: RON = 9 Ω (typ.) @VCC = 3.0 V, VIS = 0 V
(4) ESD performance: MM ≥ ±200 V, HBM ≥ ±2000 V
(5) Power-down protection for inputs (OE, S1, S0 and I/O)
(6) Package: VSSOP16 (US16)
4. Packaging
US16
©2020
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2008-06
2020-11-26
Rev.2.0
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![]() 5. Pin Assignment
6. Marking
7. System Diagram
TC7MBL3253CFK
©2020
2
Toshiba Electronic Devices & Storage Corporation
2020-11-26
Rev.2.0
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![]() 8. Truth Table
Inputs
OE
Inputs
S1
L
L
L
L
L
H
L
H
H
X
X: Don't care
Inputs
S0
L
H
L
H
X
Function
A port = B1 port
A port = B2 port
A port = B3 port
A port = B4 port
Disconnect
9. Absolute Maximum Ratings (Note)
TC7MBL3253CFK
Characteristics
Symbol Note
Test Condition
Rating
Unit
Supply voltage
VCC
-0.5 to 4.6
V
Input voltage (OE, S1, S0)
VIN
-0.5 to 4.6
V
Switch I/O voltage
VS
VCC = 0 V or Switch = Off
-0.5 to 4.6
V
Switch = On
-0.5 to VCC +0.5
Clamp diode current
IIK
-50
mA
Switch I/O current
IS
50
mA
Power dissipation
VCC/ground current
Storage temperature
PD
ICC/IGND
Tstg
180
mW
±100
mA
-65 to 150
�
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
10. Operating Ranges (Note)
Characteristics
Symbol Note
Test Condition
Rating
Unit
Supply voltage
Input voltage (OE, S1, S0)
Switch I/O voltage
Operating temperature
Input rise time
VCC
VIN
VS
Topr
dt/dv
VCC = 0 V or Switch = Off
Switch = On
1.65 to 3.6
0 to 3.6
0 to 3.6
0 to VCC
-40 to 85
0 to 10
V
V
V
�
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
©2020
3
Toshiba Electronic Devices & Storage Corporation
2020-11-26
Rev.2.0
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