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TC7MBL3125CFK Dataheets PDF



Part Number TC7MBL3125CFK
Manufacturers Toshiba
Logo Toshiba
Description Low-Voltage Low-Capacitance Quad Bus Switch
Datasheet TC7MBL3125CFK DatasheetTC7MBL3125CFK Datasheet (PDF)

TC7MBL3125CFK,TC7MBL3126CFK CMOS Digital Integrated Circuits Silicon Monolithic TC7MBL3125CFK,TC7MBL3126CFK 1. Functional Description • Low-Voltage, Low-Capacitance Quad Bus Switch 2. General The TC7MBL3125CFK and TC7MBL3126CFK are a low-voltage/low-capacitance CMOS 4bit Bus Switch. The low on-resistance of the switch allows connections to be made with minimal propagation delay time. The TC7MBL3125CFK requires the output enable (OE) input to be set high to place the output into the high impedanc.

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TC7MBL3125CFK,TC7MBL3126CFK CMOS Digital Integrated Circuits Silicon Monolithic TC7MBL3125CFK,TC7MBL3126CFK 1. Functional Description • Low-Voltage, Low-Capacitance Quad Bus Switch 2. General The TC7MBL3125CFK and TC7MBL3126CFK are a low-voltage/low-capacitance CMOS 4bit Bus Switch. The low on-resistance of the switch allows connections to be made with minimal propagation delay time. The TC7MBL3125CFK requires the output enable (OE) input to be set high to place the output into the high impedance state, whereas the TC7MBL3126CFK requires the output enable (OE) input to be set low to place the output into the high impedance. All inputs are equipped with protection circuits against static discharge. 3. Features (1) Operating voltage: VCC = 1.65 to 3.6 V (2) ON capacitance: CI/O = 7.5 pF Switch On (typ.) @VCC = 3.0 V (3) ON resistance: RON = 6.5 Ω (typ.) @VCC = 3.0 V, VIS = 0 V (4) ESD performance: MM ≥ ±200 V, HBM ≥ ±2000 V (5) Power-down protection for inputs (OE, OE and I/O) (6) Package: VSSOP14 (US14) 4. Packaging US14 ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-06 2020-11-26 Rev.3.0 5. Pin Assignment TC7MBL3125CFK TC7MBL3125CFK,TC7MBL3126CFK TC7MBL3126CFK 6. Marking TC7MBL3125CFK 7. System Diagram TC7MBL3125CFK TC7MBL3126CFK TC7MBL3126CFK 8. Truth Table Inputs Inputs OE OE (TC7MBL3125CFK) (TC7MBL3126CFK) L H H L Function A port = B port Disconnect ©2020 2 Toshiba Electronic Devices & Storage Corporation 2020-11-26 Rev.3.0 9. Absolute Maximum Ratings (Note) TC7MBL3125CFK,TC7MBL3126CFK Characteristics Symbol Note Test Condition Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage (OE, OE) VIN -0.5 to 4.6 V Switch I/O voltage VS VCC = 0 V or Switch = Off -0.5 to 4.6 V Switch = On -0.5 to VCC +0.5 Clamp diode current IIK -50 mA Switch I/O current IS 50 mA Power dissipation VCC/ground current Storage temperature PD ICC/IGND Tstg 180 mW ±100 mA -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 10. Operating Ranges (Note) Characteristics Symbol Note Test Condition Rating Unit Supply voltage Input voltage (OE, OE) Switch I/O voltage Operating temperature Input rise time VCC VIN VS Topr dt/dv VCC = 0 V or Switch = Off Switch = On 1.65 to 3.6 0 to 3.6 0 to 3.6 0 to VCC -40 to 85 0 to 10 V V V � ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. ©2020 3 Toshiba Electronic Devices & Storage Corporation 2020-11-26 Rev.3.0 TC7MBL3125CFK,TC7MBL3126CFK 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 �) Characteristics Symbol Note Test Condition VCC (V) Min Typ. Max Unit High-level input voltage VIH (OE, OE) � 1.65 to 3.6 0.7 × VCC � � V Low-level input voltage VIL (OE, OE) � 1.65 to 3.6 � � 0.3 × VCC V Input leakage current IIN (OE, OE) VIN = 0 to 3.6 V 1.65 to 3.6 � � ±1.0 µA Power-OFF leakage current IOFF OE, OE, A, B = 0 to 3.6 V 0 � � 10 µA Switch OFF-state leakage ISZ current A, B = 0 V to VCC, OE = VCC (TC7MBL3125CFK), OE = GND (TC7MBL3126CFK) 1.65 to 3.6 � � ±1.0 µA ON-resistance RON (Note 1), VIS = 0 V, (Note 2) IIS = 30 mA 3.0 � 6.5 11 Ω VIS = 3.0 V, IIS = 30 mA 3.0 � 11 17 VIS = 2.4 V, IIS = 15 mA 3.0 � 13 19 VIS = 0 V, IIS = 24 mA 2.3 � 7 11 VIS = 2.3 V, IIS = 24 mA 2.3 � 14 21 VIS = 2.0 V, IIS = 15 mA 2.3 � 16 23 VIS = 0 V, IIS = 4 mA 1.65 � 8 14 VIS = 1.65 V, IIS = 4 mA 1.65 � 19 27 Quiescent supply current ICC VIN = VCC or GND, IOUT = 0 A 3.6 � � 10 µA Note 1: All typical values are at Ta = 25 �. Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance is determined by the lower of the voltages on the two (A or B) pins. 11.2. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 �) Characteristics Output enable time Output disable time Symbol Test Condition tPZL,tPZH See Fig. 11.4., 11.5.1, Table 11.4.1 tPLZ,tPHZ See Fig. 11.4., 11.5.1, Table 11.4.1 VCC (V) Min 3.3 ± 0..


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