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VS-VSKC196-12PBF Dataheets PDF



Part Number VS-VSKC196-12PBF
Manufacturers Vishay
Logo Vishay
Description Standard Recovery Diode
Datasheet VS-VSKC196-12PBF DatasheetVS-VSKC196-12PBF Datasheet (PDF)

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) INT-A-PAK PRIMARY CHARACTERISTICS IF(AV) 165 A to 230 A Type Modules - diode, high voltage Package INT-A-PAK Circuit configuration Single diode, two diodes common anode, two diodes common cathode, two diodes doubler circuit FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage .

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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) INT-A-PAK PRIMARY CHARACTERISTICS IF(AV) 165 A to 230 A Type Modules - diode, high voltage Package INT-A-PAK Circuit configuration Single diode, two diodes common anode, two diodes common cathode, two diodes doubler circuit FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations • Simple mounting • UL approved file E78996 • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC motor control and drives • Battery chargers • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.166.. IF(AV) IF(RMS) IFSM TC 50 Hz 60 Hz 165 100 260 4000 4200 50 Hz 80 I2t 60 Hz 73 I2t 798 VRRM TJ Range VSK.196.. 195 100 305 4750 4980 113 103 1130 400 to 1600 -40 to +150 VSK.236.. 230 100 360 5500 5765 151 138 1516 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VS-VSK.166 08 VS-VSK.196 12 VS-VSK.236 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1500 1700 UNITS A °C A kA2s kA2s V °C IRRM AT 150 °C mA 20 Revision: 04-May-17 1 Document Number: 94357 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average on-state  current at case temperature Maximum RMS on-state current IF(AV) IF(RMS) Maximum peak, one-cycle on-state, non-repetitive  IFSM surge current Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state I2t VF(TO)1 VF(TO)2 rt1 rt2 Maximum forward voltage drop VFM TEST CONDITIONS VALUES VSK.166 VSK.196 VSK.236 180° conduction, half sine wave 165 195 230 100 100 100 260 305 360 t = 10 ms t = 8.3 ms No voltage reapplied 4000 4200 4750 4980 5500 5765 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM  reapplied No voltage reapplied Sine half wave, initial TJ = TJ maximum 3350 3500 80 73 4000 4200 113 103 4630 4850 151 138 t = 10 ms t = 8.3 ms 100 % VRRM  reapplied 56 80 107 52 73 98 t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 (16.7 % x .


VS-VSKC166-08PBF VS-VSKC196-12PBF VS-VSKC236-12PBF


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