Bus Switch. TC7MPB9327FT Datasheet

TC7MPB9327FT Switch. Datasheet pdf. Equivalent

TC7MPB9327FT Datasheet
Recommendation TC7MPB9327FT Datasheet
Part TC7MPB9327FT
Description Low Voltage / Low Power Dual SPDT Supply Bus Switch
Feature TC7MPB9327FT; TC7MPB9326FT,TC7MPB9327FT CMOS Digital Integrated Circuits Silicon Monolithic TC7MPB9326FT,TC7MPB932.
Manufacture Toshiba
Datasheet
Download TC7MPB9327FT Datasheet




Toshiba TC7MPB9327FT
TC7MPB9326FT,TC7MPB9327FT
CMOS Digital Integrated Circuits Silicon Monolithic
TC7MPB9326FT,TC7MPB9327FT
1. Functional Description
• Low-Voltage, Low-Power Dual SPDT Supply Bus Switch
2. General
The TC7MPB9326FT and TC7MPB9327FT are CMOS dual multiplexer/demultiplexer bus switches that can
provide an interface between two nodes at different voltage levels. These devices can be connected to two
independent power supplies. VCCA supports 1.8 V, 2.5 V and 3.3 V power supplies, whereas VCCB supports 2.5
V, 3.3 V and 5.0 V power supplies.
Bidirectional level-shifting is possible by simply adding external pull-up resistors between the A/Bn data lines
and the VCCA / VCCB supplies. There is no restriction on the relative magnitude of the A and Bn voltages; both
the 1A/2A and 1B1/1B2 ,2B1/2B2 data lines can be pulled up to the arbitrary power supplies.
The Output Enable pin (OE) can be used to disable the device so that the bus lines are effectively isolated.
This device consists of dual individual two-inputs multiplexer/demultiplexer with a common select input (S)
and an output enable (OE:TC7MPB9326FT, OE:TC7MPB9327FT). The 1A/2A inputs are connected to 1B1/1B2
and 2B1/2B2 outputs based on the combination of select input and output enable.
For TC7MPB9326FT, it has an active high Output Enable (OE) : When OE is High, the switch is on; When Low,
the switch is turned off. For the TC7MPB9327FT, it has an active low Output Enable (OE) : When OE is Low,
the switch is turned on; When OE is High, the switch is off.
The TC7MPB9326FT and TC7MPB9327FT supports power-down protection at the OE, OE input, with OE, OE
being 5.5 V tolerant.
The channels consist of n-type MOSFETs.
All the inputs provide protection against electrostatic discharge.
3. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) Operating voltage: 1.8 V to 2.5 V / 1.8 V to 3.3 V / 1.8 V to 5.0 V / 2.5 V to 3.3 V / 2.5 V to 5.0 V /
3.3 V to 5.0 V bidirectional interface
(3) Operating voltage: VCCA = 1.65 to 5.0 V, VCCB = 2.3 to 5.5 V
(4) Low ON-resistance: RON = 5.0 (typ.) @ VIS = 0 V, IIS = 30 mA, VCCA = 3.0 V, VCCB = 4.5 V
(5) ESD performance: MM ≥ ±200 V, HBM ≥ ±2000 V
(6) 5.5 V tolerance and power-down protection at the Output Enable input.
(7) Packages: TSSOP14
Note 1: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
April 2020.
©2020
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2020-04
2020-05-28
Rev.2.0



Toshiba TC7MPB9327FT
4. Packaging
TC7MPB9326FT,TC7MPB9327FT
5. Pin Assignment
TC7MPB9326FT
TSSOP14
TC7MPB9327FT
6. Marking
TC7MPB9326FT
TC7MPB9327FT
©2020
Toshiba Electronic Devices & Storage Corporation
2
2020-05-28
Rev.2.0



Toshiba TC7MPB9327FT
7. Block Diagram
TC7MPB9326FT
TC7MPB9326FT,TC7MPB9327FT
TC7MPB9327FT
8. Truth Table
Inputs (9326)
OE
H
H
L
Inputs (9327)
OE
L
L
H
Inputs
S
L
H
X
Function
A = B1
A = B2
Disconnect
9. Absolute Maximum Ratings (Note)
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCCA
-0.5 to 7.0
V
VCCB
-0.5 to 7.0
Input voltage
VIN
-0.5 to 7.0
V
Switch I/O voltage
VS
-0.5 to 7.0
V
Clamp diode current
IIK
-50
mA
Switch I/O current
IS
64
mA
VCC/ground current per supply pin
ICCA
±25
mA
ICCB
±25
Power dissipation
PD
(Note 1)
180
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of Ta = -40 to 85. From Ta = 85 to 125 a derating factor of -3.25 mW/shall be applied
until 50 mW.
©2020
Toshiba Electronic Devices & Storage Corporation
3
2020-05-28
Rev.2.0







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