Optocoupler. TCET2200 Datasheet

TCET2200 Optocoupler. Datasheet pdf. Equivalent


Vishay TCET2200
TCET2200
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual Channel)
17197_6
DVE
C
15123-2
DESCRIPTION
The TCET2200 consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
8 pin plastic dual inline package.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage 400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related
household apparatus
ORDERING INFORMATION
T
C
E
T
2
PART NUMBER
AGENCY CERTIFIED/PACKAGE
UL, cUL, VDE, FIMKO
DIP-8
FEATURES
• High common mode rejection
• CTR offered in 5 groups
• Low temperature coefficient of CTR
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• cUL tested to CSA 22.2 bulletin 5A, double protection
• DIN EN 60747-5-2 (VDE 0884)
• DIN EN 60747-5-5 pending
• FIMKO
DIP
2
0
0
CTR (%)
5 mA
50 to 600
TCET2200
7.62 mm
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
INPUT
Reverse voltage
VR
Forward current
IF
Forward surge current
tp 10 μs
IFSM
Power dissipation
Pdiss
Junction temperature
Tj
VALUE
6
60
1.5
70
125
UNIT
V
mA
A
mW
°C
Document Number: 81180
Rev. 1.1, 10-Dec-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
1


TCET2200 Datasheet
Recommendation TCET2200 Datasheet
Part TCET2200
Description Optocoupler
Feature TCET2200; TCET2200 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual Channel) 17197_6 DVE C 1.
Manufacture Vishay
Datasheet
Download TCET2200 Datasheet




Vishay TCET2200
TCET2200
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual Channel)
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current
Collector peak current
tp/T = 0.5, tp 10 ms
IC
50
mA
ICM
100
mA
Power dissipation
Pdiss
70
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
t=1s
VISO
5300
VRMS
Isolation voltage
VIORM
890
VP
Total power dissipation
Ptot
200
mW
Operating ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Soldering temperature (2)
2 mm from case, t 10 s
Tstg
- 55 to + 150
°C
Tsld
260
°C
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
Collector emitter cut-off current
VCE = 20 V, IF = 0 A,
E=0
ICEO
10
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.6
pF
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IC/IF
VCE = 5 V, IF = 5 mA
PART SYMBOL
TCET2200
CTR
MIN.
50
TYP.
MAX.
600
UNIT
%
www.vishay.com
2
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81180
Rev. 1.1, 10-Dec-10



Vishay TCET2200
TCET2200
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual Channel)
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
IF
275
mA
Power dissipation
COUPLER
Pdiss
400
mW
Rated impulse voltage
Safety temperature
VIOTM
Tsi
10
kV
175
°C
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb = 100 °C
VIO = 500 V, Tamb = 150 °C
(construction test only)
SYMBOL
Vpd
VIOTM
Vpd
RIO
RIO
RIO
MIN.
1.669
10
1.424
1012
1011
109
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
450
400
350
300
250
200
150
100
50
0
0
22441
Phototransistor
Psi (mW)
IR-diode
Isi (mA)
25 50 75 100 125 150 175
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
VIOTM
VPd
VIOWM
VIORM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Document Number: 81180
Rev. 1.1, 10-Dec-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
3







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