Bus Switch. TC7SBD385AFU Datasheet

TC7SBD385AFU Switch. Datasheet pdf. Equivalent

TC7SBD385AFU Datasheet
Recommendation TC7SBD385AFU Datasheet
Part TC7SBD385AFU
Description Single Bus Switch
Feature TC7SBD385AFU; TC7SBD385AFU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SBD385AFU Single Bus Swit.
Manufacture Toshiba
Datasheet
Download TC7SBD385AFU Datasheet




Toshiba TC7SBD385AFU
TC7SBD385AFU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SBD385AFU
Single Bus Switch with Level Shifting
The TC7SBD385AFU provides single bit of high-speed
TTL-compatible switching. The low on resistance of the switch
allows connections to be made with minimal propagation delay.
The device is organized as just 1-bit low-impedance switch with
output-enable (OE) input. When OE is high, the switch is on and
data can flow from port A to port B, or vice versa. When OE is
low, the switch is open and a high-impedance state exists
between the two ports.
The device is enable to realize the shift of signal level from 5 V
to 3.3 V.
All inputs are equipped with protection circuits against static
discharge.
Features
Operating voltage: VCC = 4.5 to 5.5 V
High speed operation: tpd = 0.32 ns (max)
Low on resistance: RON = 5 (typ.)
ESD performance: Machine model ≥ ±200 V
Human body model ≥ ±2000 V
TTL level input (control input)
Low Power Dissipation: ICC = 10 μA (max.)
Package: USV
Weight: 0.006 g (typ.)
Pin Assignment (top view)
VCC
OE
5
4
JT
123
A B GND
Start of commercial production
2003-02
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2014-03-01



Toshiba TC7SBD385AFU
Truth Table
Input
OE
L
H
Function
Disconnect
A port = B port
System Diagram
A
B
TC7SBD385AFU
OE
Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
Power supply range
DC input voltage
DC switch voltage
Input diode current
Continuous channel current
Power dissipation
DC VCC/GND current
Storage temperature
VCC
0.5 to 7.0
V
VIN
0.5 to 7.0
V
VS
0.5 to 7.0
V
IIK
50
mA
IS
128
mA
PD
200
mW
ICC/IGND
±100
mA
Tstg
65 to 150
°C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Switch voltage
Operating temperature
Input rise and fall time
VCC
VIN
VS
Topr
dt/dv
4.5 to 5.5
0 to 5.5
0 to 5.5
40 to 85
0 to 10
V
V
V
°C
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
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Toshiba TC7SBD385AFU
TC7SBD385AFU
Electrical Characteristics
DC Characteristics (Ta = −40~85°C)
Characteristics
“H” level
Input voltage
“L” level
Symbol
VIH
VIL
Test Condition
High-level output voltage
(Note 2)
VOH
IOH=-1μA
VIS = VCC
Input leakage current
Power off leakage current
Off-STATE leakage current
(switch off)
IIN
IOFF
VIN = 0 to 5.5 V
A, B, OE= 0 to 5.5 V
ISZ A, B = 0 to 5.5 V, OE = GND
ON resistance
(Note 3)
RON
VIS = 0 V
IIS = 64 mA
IIS = 30 mA
VIS = 2.3 V, IIS = 15 mA
Quiescent supply current
Increase in ICC per input
ICC
ΔICC
VIN = VCC or GND, IOUT = 0
VIN = 3.4 V (one input)
VCC (V)
4.5 to 5.5
4.5 to 5.5
4.75
5.0
5.25
4.5 to 5.5
0
4.5 to 5.5
4.5
4.75
4.5
4.75
4.5
4.75
5.5
5.5
Min
Typ.
(Note 1)
Max
Unit
2.0
V
0.8
2.3
2.8
3.2
2.5
3.0
3.4
V
2.7
3.2
3.6
±1.0 μA
±1.0 μA
±1.0 μA
5
9
5
8
5
5
9
Ω
8
35
65
35
50
10 μA
2.5 mA
Note 1: Typical values are at VCC = 5 V, Ta = 25°C.
Note 2: It recommends that this device uses Pull-up resistance when adding and using resistance for
an output terminal. Since it couses to drop a VOH voltage level when using Pull-down resistance
for an output terminal.
Note 3: Measured by the voltage drop between A and B pins at the indicated current through the switch. On
resistance is determined by the lower of the voltages on the two (A or B) pins.
AC Characteristics (Ta = −40~85°C)
Characteristics
Propagation delay time
(bus to bus)
Output enable time
Output disable time
Symbol
Test Condition
tpLH
tpHL
tpZL
tpZH
tpLZ
tpHZ
Figure 1, Figure 2
Figure 1, Figure 3
Figure 1, Figure 3
Min Max Unit
VCC (V)
(Note) 4.5
0.32 ns
4.5
4.5
ns
4.5
5.0
ns
Note: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.
Capacitive Characteristics (Ta = 25°C)
Characteristics
Symbol
Control pin input capacitance
Switch terminal capacitance
CIN
CI/O
OE = GND
Note: This parameter is guaranteed by design.
Test Condition
Typ. Unit
VCC (V)
(Note) 5.0
3
pF
(Note) 5.0
10
pF
3
2014-03-01







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