Schmitt Inverter. TC7SET14F Datasheet

TC7SET14F Inverter. Datasheet pdf. Equivalent


Toshiba TC7SET14F
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SET14F
TC7SET14F
1. Functional Description
• Schmitt Inverter
2. Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperature range: Topr = -40 to 125 (Note 2)
(3) High speed operation: tpd = 5.0 ns (typ.) (VCC = 5.0 V, CL = 15 pF)
(4) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 )
(5) Compatible with TTL outputs
(6) 5.5 V tolerant inputs
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SMV
4. Marking and Pin Assignment
Marking
©2015-2017
Toshiba Electronic Devices & Storage Corporation
1
Pin Assignment (Top view)
Start of commercial production
2004-02
2017-12-21
Rev.3.0


TC7SET14F Datasheet
Recommendation TC7SET14F Datasheet
Part TC7SET14F
Description Schmitt Inverter
Feature TC7SET14F; CMOS Digital Integrated Circuits Silicon Monolithic TC7SET14F TC7SET14F 1. Functional Description .
Manufacture Toshiba
Datasheet
Download TC7SET14F Datasheet




Toshiba TC7SET14F
5. IEC Logic Symbol
TC7SET14F
6. Truth Table
A
Y
L
H
H
L
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to 7.0
DC output voltage
VOUT
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 1)
±20
DC output current
IOUT
±25
VCC/ground current
ICC
±50
Power dissipation
PD
200
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
8. Operating Ranges (Note)
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
VCC
4.5 to 5.5
V
VIN
0 to 5.5
VOUT
0 to VCC
Topr
(Note 1)
-40 to 125
(Note 2)
-40 to 85
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: For devices with the ordering part number ending in J(CT.
Note 2: For devices except those with the ordering part number ending in J(CT.
©2015-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-21
Rev.3.0



Toshiba TC7SET14F
TC7SET14F
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
VCC (V) Min Typ. Max Unit
Positive threshold voltage
VP
4.5
1.9
V
5.5
2.1
Negative threshold voltage
VN
4.5
0.5
V
5.5
0.6
Hysteresis voltage
VH
4.5
0.4
1.4
V
5.5
0.4
1.5
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
VOH VIN = VIL
VOL VIN = VIH
IIN
ICC
ICCT
VIN = 5.5 V or GND
VIN = VCC or GND
VIN = 3.4 V
IOH = -50 µA
4.5
4.4
4.5
V
IOH = -8 mA
4.5
3.94
IOL = 50 µA
4.5
0.0
0.1
V
IOL = 8 mA
4.5
0.36
0 to 5.5
±0.1
µA
5.5
2.0
µA
5.5
1.35 mA
9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Positive threshold voltage
Symbol
VP
Test Condition
Negative threshold voltage
VN
Hysteresis voltage
VH
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
VOH VIN = VIL
VOL VIN = VIH
IIN
ICC
ICCT
VIN = 5.5 V or GND
VIN = VCC or GND
VIN = 3.4 V
IOH = -50 µA
IOH = -8 mA
IOL = 50 µA
IOL = 8 mA
VCC (V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
4.5
4.5
0 to 5.5
5.5
5.5
Min
0.5
0.6
0.4
0.4
4.4
3.80
Max
Unit
1.9
V
2.1
V
1.4
V
1.5
V
0.1
V
0.44
±1.0
µA
20.0
µA
1.50
mA
©2015-2017
Toshiba Electronic Devices & Storage Corporation
3
2017-12-21
Rev.3.0







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