TC7SG00AFS

TC7SG00AFS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00AFS 2-Input NAND Gate Features High output current : ±8 mA (min) at VCC = 3.0 V Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V, 15pF Operating voltage range : VCC = 0.9 to 3.6 V 5.5-V tolerant inputs SO N5-P -0 .35 Weight: 0.001 g (typ.) (fSV) Marking W1 Product Name Pin Assignment (top view) IN A 1 GND 2 5 VCC IN B 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol Rating Unit VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to VCC + 0.5 V −20 mA ±20 (Note 1) mA ±25 mA ±50 mA 50 mW −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: VOUT < GN...